Backside Power Network Contact Bridge for Scaled IC Connections

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Solution Overview

Problem

In highly down-scaled integrated circuit devices, achieving a stable and optimized power distribution network in a small area is challenging due to difficulties in the manufacturing process of electrical connections, particularly in forming the via power rail and source/drain contacts without affecting other elements.

Innovation Solution

The integration of a contact-merged bridge as a unitary structure between the source/drain contact and via power rail, eliminating the need for partial etching of the rail insulation layer, thereby simplifying the manufacturing process and enhancing electrical connectivity.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If partial etching of the rail insulation layer is performed to form via power rail and source/drain contacts, then electrical connections can be established, but the manufacturing process becomes complex and difficult to control in down-scaled devices

Engineering Contradiction:
Improveelectrical connection reliabilityVSAvoidmanufacturing process complexity
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The patent merges the via power rail and source/drain contact formation into a single integrated structure called a contact-merged bridge. This unitary structure eliminates the need for partial etching of the rail insulation layer, as the merged structure naturally provides both the via connection and source/drain contact functions simultaneously, thereby simplifying the manufacturing process while maintaining electrical connection reliability

Inventive Principle:
Principle #5Merging (Combining)

Solution Approach 2:

The patent extracts and eliminates the complex partial etching step from the manufacturing process. By designing the contact-merged bridge structure that self-provides the necessary electrical connections without requiring removal of the rail insulation layer, the problematic etching step is completely removed from the process flow, reducing manufacturing complexity and improving process control

Inventive Principle:
Principle #2Taking out (Extraction)

2Area of moving object

If device area is reduced for down-scaling, then integration density increases, but forming stable electrical connections becomes more difficult

Engineering Contradiction:
Improvedevice areaVSAvoidelectrical connection stability
Core Design Contradiction:
Area of moving objectVSReliability

Solution Approach 1:

The contact-merged bridge merges multiple electrical connection functions into a single compact structure that occupies minimal area. By integrating the via power rail and source/drain contact into one unitary element, the patent achieves stable electrical connections in a highly down-scaled footprint, maintaining connection reliability while minimizing the area required for power distribution

Inventive Principle:
Principle #5Merging (Combining)

Solution Approach 2:

The patent utilizes three-dimensional structuring in the contact-merged bridge design, where the merged structure extends vertically through multiple layers to provide robust electrical connections. This dimensional approach allows stable connections to be achieved in a compact planar area by exploiting the vertical dimension for connection pathways

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

Data Source

PatentEP4535413B1Integrated circuit device and method of manufacturing the same
Publication Date: 2026.04.22 SAMSUNG ELECTRONICS CO LTD
  • EP4535413B1 patent drawingFigure 1
  • EP4535413B1 patent drawingFigure 2
  • EP4535413B1 patent drawingFigure 3

AI summary

In the integrated circuit device and a method of manufacturing the same according to an embodiment, in a structure including a backside power distribution network for a device region having an area reduced based on down-scaling, a contact-merged bridge is formed on a source/drain contact, and thus, difficulty of a manufacturing process may be reduced and electrical characteristics may be enhanced.