Backside-Wired Power Gating Switch for IC Routing Efficiency

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Solution Overview

Problem

The increasing demand for high integration and advanced semiconductor processes has led to narrower wire widths, tighter spacing, and taller wire heights in integrated circuits, resulting in increased parasitic component influence and reduced power supply voltage, which complicates efficient wire routing and via design.

Innovation Solution

The proposed solution involves using a backside wiring layer to supply power to a power gating switch, thereby increasing routing resources and improving area efficiency. This is achieved by incorporating a backside wiring layer with isolated patterns on the substrate's backside, connected to a power gating switch on the front side through backside vias and contacts.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Adaptability or versatility

If power is supplied to power gating switch through frontside wiring layer, then routing is simpler, but routing resources are insufficient and area efficiency is reduced

Engineering Contradiction:
Improverouting resourcesVSAvoidrouting complexity
Core Design Contradiction:
Adaptability or versatilityVSDevice complexity

Solution Approach 1:

The patent utilizes the backside of the substrate as an additional dimension for wiring, creating a backside wiring layer that provides extra routing resources. This allows power signals to be routed from the backside to the power gating switch on the frontside, increasing routing adaptability without adding lateral complexity to the frontside layout.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

Solution Approach 2:

The patent segments the wiring function between frontside and backside layers, with the backside wiring layer handling power supply routing and the frontside handling signal routing. This segmentation distributes routing complexity across different spatial zones, improving overall routing efficiency and resource utilization.

Inventive Principle:
Principle #1Segmentation

2Area of moving object

If wire width and spacing are decreased for high integration, then integration density increases, but parasitic component influence increases

Engineering Contradiction:
Improveintegration densityVSAvoidparasitic component influence
Core Design Contradiction:
Area of moving objectVSObject-affected harmful factors

Solution Approach 1:

By moving power routing to the backside wiring layer, the patent reduces the burden on frontside wiring resources. This allows frontside wires to be optimized for signal routing with appropriate widths and spacing, reducing parasitic effects while maintaining high integration density through efficient use of the backside dimension.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

3Use of energy by moving object

If power supply voltage is decreased for reduced power consumption, then power efficiency improves, but the influence of parasitic components increases

Engineering Contradiction:
Improvepower consumptionVSAvoidparasitic component influence
Core Design Contradiction:
Use of energy by moving objectVSObject-affected harmful factors

Solution Approach 1:

The backside wiring layer provides dedicated power routing paths that are optimized for low-impedance power delivery. By separating power routing from signal routing in the vertical dimension, the patent reduces parasitic inductance and resistance effects on the power supply voltage, enabling lower operating voltages without excessive parasitic influence.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

Data Source

PatentUS20250079310A1Integrated circuit including power gating switch
Publication Date: 2025.03.06 SAMSUNG ELECTRONICS CO LTD
  • US20250079310A1 patent drawing
  • US20250079310A1 patent drawing
  • US20250079310A1 patent drawing

AI summary

An integrated circuit includes: a backside wiring layer on a back side of a substrate, the backside wiring layer including a first backside pattern and a second backside pattern isolated from each other; and a power gating switch on a front side of the substrate, the power gating switch connected to the first and second backside patterns. The power gating switch includes: a first source/drain region connected to the first backside pattern, and configured to receive a first supply voltage from the first backside pattern; a gate line structure configured to receive a power gating signal; and a second source/drain region connected to the second backside pattern, and configured to receive a power signal from the first source/drain region based on the power gating signal.