Back-Side Power Delivery With Glass Front Support for 3D ICs
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Solution Overview
Problem
The challenge of scaling semiconductor devices beyond 20 nanometers is hindered by high capacitance and quantum variability, making traditional planar scaling impractical, while 3D integration is necessary for increased density and performance, but conventional transistors with front-side contacts limit architectural flexibility and increase parasitic effects.
Innovation Solution
Implementing transistors with back-side contacts and using a glass support structure at the front side of ICs to reduce parasitic effects and enable 3D integration, allowing for back-side power delivery and flexible electrical connections.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If traditional planar scaling is used to increase device density, then manufacturing simplicity is maintained, but capacitance increases and quantum variability worsens beyond 20 nanometers
Solution Approach 1:
The patent transitions from traditional planar (2D) transistor scaling to three-dimensional (3D) transistor structures with back-side contacts. This dimensional change allows continued density improvement without further lateral scaling, avoiding the capacitance and quantum variability issues that plague sub-20nm planar transistors. The 3D architecture separates front-side active devices from back-side interconnects, reducing parasitic effects.
2Quantity of substance
If 3D integration is implemented to increase density, then device capacity improves, but architectural flexibility is limited by conventional front-side contact transistors
Solution Approach 1:
The patent inverts the conventional transistor contact architecture by placing contacts on the back side of the substrate rather than the front side. This inversion enables greater architectural flexibility for 3D integration, allowing independent optimization of front-side active devices and back-side interconnect structures, and enabling new device configurations that were not possible with traditional front-side contact transistors.
3Ease of manufacture
If conventional front-side contact transistors are used, then manufacturing is simpler, but parasitic effects increase and performance deteriorates
Solution Approach 1:
The patent segments the transistor structure into distinct front-side and back-side components. The front side contains active devices while the back side contains contacts and interconnects. This segmentation physically separates signal paths from power delivery paths, reducing parasitic coupling and interference. It also allows independent optimization of each segment for its specific function, minimizing overall parasitic effects while maintaining manufacturing feasibility.
Data Source
AI summary
Embodiments of the present disclosure are based on using transistors with back-side contacts. Such transistors enable back-side power delivery to IC components (e.g., transistors, etc.) of an IC structure, which may be more advantageous than front-side power delivery in some implementations. Embodiments of the present disclosure are further based on recognition that using a glass support structure at the front side of an IC structure with back-side power delivery may advantageously reduce parasitic effects in the IC structure, e.g., compared to using a silicon-based support structure at the front.