Backside Power Distribution IC Layout for Lower IR Drop
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Solution Overview
Problem
The existing semiconductor architectures face challenges in minimizing power distribution network (PDN) complexity and current-resistance (IR) drop, particularly due to the integration of active and passive devices on the same substrate, which hinders area reduction and efficiency.
Innovation Solution
The integration circuit device separates active and passive devices onto different substrates, with a backside power distribution network (BSPDN) architecture, where the active device is on the front side and the passive device is on the rear side, utilizing a first substrate with a BEOL structure for signal routing and a second substrate with a power distribution structure, connected via bonding structures to form an interface, allowing for efficient power distribution and signal transfer.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If active and passive devices are integrated on the same substrate, then device integration is achieved, but process difficulty and manufacturing complexity increase
Solution Approach 1:
The patent divides the integrated circuit into separate substrates: a first substrate containing active devices and a second substrate containing passive devices. This segmentation allows each substrate to be manufactured and processed independently, reducing process difficulty while maintaining overall device integration through subsequent bonding of the substrates together.
2Device complexity
If active and passive devices are integrated on the same substrate, then compact design is achieved, but area reduction and IR drop improvement are hindered
Solution Approach 1:
The patent transitions from planar integration on a single substrate to three-dimensional stacking of multiple substrates. The first substrate with active devices is bonded to the second substrate with passive devices, utilizing the vertical dimension to achieve compact design while allowing each substrate to be optimized for its specific function, thereby enabling area reduction and improved IR drop performance.
3Area of stationary object
If BSPDN architecture is implemented with separate substrates, then area reduction and IR drop improvement are achieved, but manufacturing complexity increases
Solution Approach 1:
The patent employs preliminary actions by preparing bonding structures and interface configurations on each substrate before the bonding process. This includes forming bonding pads, alignment markers, and ensuring surface compatibility in advance, which simplifies the actual bonding operation and reduces overall manufacturing complexity despite the multi-substrate architecture.
4Reliability
If bonding structures are used to connect substrates, then electrical connection is achieved, but interface formation complexity increases
Solution Approach 1:
The patent introduces bonding structures as intermediary elements between the first and second substrates. These bonding structures serve as mediators that facilitate reliable electrical connections while managing the interface formation process. The bonding structures may include bonding pads, metallization layers, or intermediate substrates that simplify the bonding process and ensure robust electrical connectivity.
Data Source
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AI summary
An integrated circuit device includes a first substrate having a first surface and a second surface opposite to the first surface, and including an active device therein, a first back end of layer (BEOL) structure disposed on the first surface of the first substrate and configured to route signals, a second substrate disposed on the first surface of the first substrate with the first BEOL structure disposed therebetween, and including a passive device therein, a power distribution structure disposed on the second surface of the first substrate, a first bonding structure positioned on the first BEOL structure, and a second bonding structure disposed between the first bonding structure and the second substrate.