Backside Power Delivery Junction Layout for STI Passive Integration
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Solution Overview
Problem
Conventional semiconductor designs face challenges in space utilization and isolation within densely packed devices, particularly in integrating passive components like resistors, capacitors, and inductors, due to the reliance on substrate and substrate contacts for backside power delivery, which complicates fabrication and increases the risk of defects.
Innovation Solution
A semiconductor device with a junction backside power delivery network that places passive devices under the shallow trench isolation (STI) region, utilizing insulating materials for improved isolation and reducing the need for substrate contacts, allowing for efficient space utilization and simplified fabrication.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If substrate contacts are used for backside power delivery, then power delivery is achieved, but space utilization is reduced and fabrication complexity increases
Solution Approach 1:
The patent removes substrate contacts from the device structure entirely, extracting this unnecessary component. Power delivery is achieved through the backside surface itself, eliminating the need for separate substrate contact structures and simplifying both fabrication and device architecture.
Solution Approach 2:
The backside surface serves multiple functions: it provides both the power delivery pathway and the structural base for the device. By making the backside surface itself conductive through doping, it eliminates the need for separate substrate contacts while maintaining power delivery functionality.
2Area of stationary object
If passive devices are integrated under STI region, then space utilization is improved, but isolation requirements become more challenging
Solution Approach 1:
The patent applies different doping characteristics to different regions: the bulk substrate maintains high doping concentration for power delivery, while the STI region and adjacent areas provide electrical isolation. This local differentiation of electrical properties enables both high space utilization and reliable isolation.
Solution Approach 2:
The STI structure acts as an intermediary element between the conductive backside surface and the active devices. It provides the necessary electrical isolation barrier while allowing the underlying doped substrate to continue serving as the power delivery pathway.
3Productivity
If substrate contacts are eliminated, then fabrication process is simplified, but power delivery network design becomes more challenging
Solution Approach 1:
The patent changes the electrical parameters of the substrate by introducing controlled doping concentrations. The backside surface is doped to achieve optimal conductivity for power delivery, transforming the substrate into an active power delivery component rather than a passive support structure.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This design enhances space utilization, improves electrical isolation, reduces parasitic capacitance, and simplifies the fabrication process, leading to potential cost savings and increased manufacturing efficiency while maintaining device performance and integrity.
Implementation Method 1
The first doped region is in direct contact with the backside contact to form an ohmic contact across an active region of the semiconductor device
Implementation Method 2
The first doped region is in direct contact with the backside contact to form an ohmic contact across an active region of the semiconductor device and a Schottky contact across a gate region
Data Source
AI summary
A semiconductor device includes a shallow trench isolation (STI), a first doped region under the STI, an N-well region connected to the first doped region and the STI on a first side, a P-well region connected to the first doped region and the STI on a second side, a backside contact. A dopant concentration of the first doped region is higher than the dopant concentration of the N-well region and the dopant concentration of the P-well region.