Backside Power Rail Connection for Source/Drain Contacts
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Solution Overview
Problem
The increasing complexity and integration of semiconductor devices pose challenges in efficiently connecting power rails to source/drain regions while maintaining high reliability and minimizing contamination risks.
Innovation Solution
A semiconductor device design that includes a substrate with a power rail on the second surface, connected via a through electrode and a landing pad to source/drain contacts, allowing for simplified manufacturing and reduced contamination risk, while enhancing power delivery and performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If power rails are integrated with source/drain contacts on the same surface, then device integration is improved, but contamination risk and process complexity increase
Solution Approach 1:
The power rail is moved from the front surface to the back surface of the substrate, utilizing the third dimension (depth/thickness) to resolve the conflict between integration and contamination. The through-electrode connects the back-surface power rail to the front-surface source/drain contact, enabling power delivery without front-surface integration.
Solution Approach 2:
The power delivery system is segmented into separate components: the power rail on the back surface, the through-electrode penetrating the substrate, and the source/drain contact on the front surface. This segmentation allows each component to be optimized independently, reducing contamination risk while maintaining integration functionality.
2Adaptability or versatility
If power rails are integrated with source/drain contacts on the same surface, then device integration is improved, but process complexity increases
Solution Approach 1:
By moving the power rail to the back surface and using the through-electrode to connect it to the front surface, the patent simplifies the manufacturing process. The power rail can be formed independently on the back surface before substrate processing, reducing the number of steps required on the front surface and simplifying overall process complexity.
3Object-affected harmful factors
If through electrode and landing pad are used to connect power rail to source/drain contact, then contamination risk is reduced, but device complexity increases
Solution Approach 1:
The connection path is segmented into the through-electrode (penetrating the substrate) and the landing pad (on the front surface). This segmentation isolates the power rail formation process from the front surface processing, reducing contamination risk while the added components are minimal in number and can be integrated into existing process flows.
Data Source
AI summary
A semiconductor device includes a substrate including a first surface and a second surface opposite to the first surface; an active pattern extending in a first direction on the first surface of the substrate; a first source/drain contact including a first portion connected to a source/drain region of the active pattern, and a second portion extending from the first portion in the first direction or in a second direction intersecting the first direction; a power rail providing a voltage on the second surface of the substrate; a through electrode connected to the power rail and penetrating the substrate; and a landing pad connecting the through electrode and the second portion of the source/drain contact.