Backside Power Rail Heat Dissipation for Dense Semiconductor Dies
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Solution Overview
Problem
As semiconductor devices continue to increase integration density through reduced minimum feature sizes, heat dissipation becomes a significant challenge that affects device performance and reliability.
Innovation Solution
Implementing high thermal conductivity materials, such as AlN, BN, Y2O2, Y3Al5O12, Al2O2, SiC, graphene, and diamond-like-carbon, as heat dissipation layers on a support substrate, combined with backside power structures, to enhance heat spreading and improve junction to ambient thermal resistance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If minimum feature size is reduced to increase integration density, then more components can be integrated into a given area, but heat dissipation becomes more difficult and thermal resistance increases
Solution Approach 1:
The patent introduces a third dimension by forming heat dissipation protrusions that extend vertically from the substrate surface. These protrusions create additional thermal pathways in the vertical dimension, allowing heat to dissipate upward away from the high-density circuit components while maintaining the high integration density on the substrate plane.
Solution Approach 2:
The patent changes the physical parameters of the substrate by forming protrusions with specific geometric parameters (height, width, spacing) and applying coatings with specific thermal conductivity parameters. This modifies the thermal field distribution and creates optimized heat dissipation pathways without changing the circuit layout.
2Reliability
If more heat dissipation structures are added to improve thermal resistance, then heat dissipation performance improves, but device complexity increases
Solution Approach 1:
The heat dissipation function is segmented into multiple discrete protrusions distributed across the substrate surface. Each protrusion acts as an independent heat dissipation element, allowing the thermal management function to be divided into multiple parallel pathways rather than requiring a single complex heat sink structure.
Solution Approach 2:
The array of heat dissipation protrusions creates a porous-like structure on the substrate surface. This porous configuration increases the surface area available for heat dissipation and creates multiple thermal pathways while maintaining structural simplicity and ease of fabrication.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enhances heat dissipation in integrated circuit dies, improving chip performance and reliability by up to 1.33°C/W, thereby addressing the heat dissipation challenges in high-density semiconductor devices.
Implementation Method 1
one or more heat dissipation layers may be formed on the support substrate. The heat dissipation layers may be made of a high thermal conductivity material
Data Source
AI summary
A device includes a device layer comprising a first transistor; a first interconnect structure on a front-side of the device layer; and a second interconnect structure on a backside of the device layer. The second interconnect structure includes a power rail. The device further includes a carrier substrate bonded to the first interconnect structure and a first heat dissipation layer contacting the carrier substrate.