Semiconductor Backside Power Rail Structure for Cleaner Power Delivery
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Solution Overview
Problem
The increasing demand for high reliability, high speed, and multi-functionality in semiconductor devices necessitates more complex and highly integrated structures, which poses challenges in power delivery and manufacturing processes, particularly in forming power rails and vias on the substrate surface, leading to potential contamination and process complexity.
Innovation Solution
The semiconductor device design includes forming power rails and vias on the back surface of the substrate, separated from the active regions, using a dual damascene process to enhance power delivery and simplify the manufacturing process, thereby reducing contamination risks and process complexity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If power rails and vias are formed on the front surface of the substrate, then power delivery can be achieved, but contamination risk and process complexity increase
Solution Approach 1:
The patent inverts the conventional approach by forming power rails and vias on the back surface of the substrate instead of the front surface. This inversion allows power delivery network formation without exposing active regions to contamination, thus resolving the contradiction between achieving power delivery and minimizing contamination risk
2Reliability
If power rails and vias are formed on the front surface of the substrate, then power delivery can be achieved, but manufacturing process complexity increases
Solution Approach 1:
By forming power rails and vias on the back surface, the patent eliminates the need for complex additional processing steps required for front-surface formation, thereby reducing manufacturing process complexity while maintaining power delivery capability
Solution Approach 2:
The substrate surface is segmented into front and back surfaces, with the back surface dedicated to power rail and via formation. This segmentation separates power delivery structure formation from active region processing, simplifying the overall manufacturing process
3Adaptability or versatility
If structures are made more complex and highly integrated, then device functionality and performance improve, but power delivery and manufacturing challenges increase
Solution Approach 1:
The patent moves power rail and via formation to the back surface dimension, separating it from front-surface active regions. This dimensional separation allows complex device functionality to be achieved on the front surface without proportionally increasing power delivery and manufacturing complexity
Data Source
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AI summary
A semiconductor device includes a substrate including a first surface and a second surface opposite to the first surface; an active pattern extending in a first direction on the first surface of the substrate; a first source/drain contact including a first portion connected to a source/drain region of the active pattern, and a second portion extending from the first portion in the first direction or in a second direction intersecting the first direction; a power rail providing a voltage on the second surface of the substrate; a through electrode connected to the power rail and penetrating the substrate; and a landing pad connecting the through electrode and the second portion of the source/drain contact.