Backside Power Rail Structure for Low-Loss Semiconductor Delivery

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Solution Overview

Problem

As semiconductor devices shrink, power delivery becomes increasingly inefficient due to electrical isolation issues and high resistance in metal layers, making it difficult to provide power without affecting device performance, and backside power delivery complicates manufacturing processes.

Innovation Solution

The implementation of backside power delivery systems, including a reconstituted element with a semiconductor die, insulating material, power rail, and interconnect structure, allows for efficient power delivery from the front surface to the back surface of the semiconductor die, reducing voltage drops and enabling thicker, shorter power lines with lower resistance.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Adaptability or versatility

If power is delivered through frontside metal layers in shrinking semiconductor devices, then signal routing can be integrated with power delivery, but power delivery losses increase due to high resistance and electrical isolation issues

Engineering Contradiction:
Improveintegration of signal routing and power deliveryVSAvoidpower delivery losses
Core Design Contradiction:
Adaptability or versatilityVSLoss of energy

Solution Approach 1:

The patent introduces backside power delivery as a third-dimensional solution, routing power lines through the backside of the semiconductor device rather than through the frontside metal layers. This dimensional separation allows signal routing and power delivery to occupy different spatial dimensions, eliminating the trade-off between integration and power delivery efficiency. Power rails are established on the backside substrate, connecting to power vias that extend through the device thickness to reach frontside power contacts.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

2Loss of energy

If backside power delivery is implemented, then power delivery losses are reduced and frontside congestion is alleviated, but manufacturing process complexity increases

Engineering Contradiction:
Improvepower delivery lossesVSAvoidmanufacturing process complexity
Core Design Contradiction:
Loss of energyVSDevice complexity

Solution Approach 1:

The manufacturing process is segmented into distinct phases: frontside processing to create circuitry and power vias, backside processing to form power rails and interconnect structures, and final assembly to bond the sides together. This segmentation allows each subsystem to be optimized independently - the frontside for signal routing and the backside for power delivery - while simplifying the overall manufacturing by avoiding the need to route both signals and power through the same complex frontside metal layers.

Inventive Principle:
Principle #1Segmentation

3Loss of energy

If thicker, shorter power lines are used to reduce resistance, then power delivery efficiency improves, but device area increases

Engineering Contradiction:
Improvepower delivery efficiencyVSAvoiddevice area
Core Design Contradiction:
Loss of energyVSArea of stationary object

Solution Approach 1:

By moving power delivery to the backside dimension, the patent enables the use of thicker power rails with larger cross-sectional areas without increasing the device footprint. The backside substrate provides additional vertical space for accommodating lower-resistance power paths through the device thickness, achieving improved power delivery efficiency while maintaining the same planar device area.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

Data Source

PatentUS20240186248A1Backside power delivery network
Publication Date: 2024.06.06 ADEIA SEMICONDUCTOR BONDING TECHNOLOGIES INC
  • US20240186248A1 patent drawing
  • US20240186248A1 patent drawing
  • US20240186248A1 patent drawing

AI summary

An assembly may include a reconstituted element having a front surface and a back surface, the reconstituted element comprising: a semiconductor die having a front side and a back side, the semiconductor die including circuitry closer to the front side than to the back side and a via extending from the back side of the semiconductor die to connect to the circuitry, an insulating material disposed along a side surface of the semiconductor die, a power rail extending from the front surface to the back surface of the reconstituted element and configured to deliver power to the semiconductor die; and an interconnect structure configured to electrically connect the power rail to the via and to deliver power to the semiconductor die from the back side of the semiconductor die.