Backside-Wired Power Gating Switch for Dense IC Power Routing

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Solution Overview

Problem

The increasing demand for high integration and reduced power consumption in semiconductor processes necessitates efficient wire routing and via design in integrated circuits, particularly due to the influence of parasitic components and decreased wire dimensions.

Innovation Solution

The integration of a backside wiring layer and power gating switch, which includes a first and second backside pattern connected by a power gating switch on the front side of the substrate, allowing for efficient power distribution through backside vias and contacts, reducing routing complexity and improving area efficiency.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Area of moving object

If wire dimensions are decreased for high integration, then integration density is improved, but parasitic component influence increases

Engineering Contradiction:
Improveintegration densityVSAvoidparasitic component influence
Core Design Contradiction:
Area of moving objectVSObject-affected harmful factors

Solution Approach 1:

The patent introduces a backside wiring layer, transitioning the power distribution from a single-plane (front side only) to a three-dimensional structure. This allows power wires to be routed on both the front and back sides of the substrate, effectively adding a vertical dimension to the routing resources and reducing the burden on individual wire dimensions.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

Solution Approach 2:

The power distribution network is segmented into front-side wiring and backside wiring layers. The backside wiring layer handles power distribution independently, separating the power routing function from the signal routing function on the front side, thereby reducing parasitic effects on signal wires.

Inventive Principle:
Principle #1Segmentation

2Loss of energy

If power supply voltage is decreased for reduced power consumption, then power consumption is reduced, but the influence of parasitic components increases

Engineering Contradiction:
Improvepower consumptionVSAvoidparasitic component influence
Core Design Contradiction:
Loss of energyVSObject-affected harmful factors

Solution Approach 1:

By adding the backside wiring layer, the patent creates additional routing resources that reduce the length and complexity of power delivery paths. This three-dimensional power distribution network compensates for the increased parasitic effects that would otherwise result from lower operating voltages.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

3Area of stationary object

If wire routing complexity is reduced, then area efficiency is improved, but routing flexibility may be limited

Engineering Contradiction:
Improvearea efficiencyVSAvoidrouting flexibility
Core Design Contradiction:
Area of stationary objectVSAdaptability or versatility

Solution Approach 1:

The backside wiring layer provides additional routing dimensions without increasing the planar footprint. Designers can route power signals on the back side to achieve shorter paths and better area efficiency, while the gate line structure on the front side maintains routing flexibility for control signals.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

Data Source

PatentEP4521644B1Integrated circuit including power gating switch
Publication Date: 2026.04.08 SAMSUNG ELECTRONICS CO LTD
  • EP4521644B1 patent drawingFigure 1
  • EP4521644B1 patent drawingFigure 2
  • EP4521644B1 patent drawingFigure 3A

AI summary

An integrated circuit includes: a backside wiring layer on a back side of a substrate, the backside wiring layer including a first backside pattern and a second backside pattern isolated from each other; and a power gating switch on a front side of the substrate, the power gating switch connected to the first and second backside patterns. The power gating switch includes: a first source/drain region connected to the first backside pattern, and configured to receive a first supply voltage from the first backside pattern; a gate line structure configured to receive a power gating signal; and a second source/drain region connected to the second backside pattern, and configured to receive a power signal from the first source/drain region based on the power gating signal.