Backside Power Delivery Layout With Through Electrodes
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Solution Overview
Problem
Current semiconductor devices face challenges in efficiently implementing a backside power delivery network due to complex manufacturing processes and high costs.
Innovation Solution
A semiconductor device design that incorporates a streamlined manufacturing process by using a base insulation layer, channel layers, source/drain patterns, gate structures, lower wire structures, and through electrodes to establish a backside power delivery network, thereby simplifying the manufacturing process and reducing costs.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Power
If a backside power delivery network is implemented in conventional semiconductor devices, then power delivery capability is improved, but manufacturing complexity increases
Solution Approach 1:
The patent implements the power delivery network on the backside of the substrate rather than the front side, inverting the conventional approach. This allows power delivery functionality to be achieved without interfering with the standard front-side device fabrication processes, thereby improving power delivery capability while avoiding increased manufacturing complexity.
Solution Approach 2:
The patent segments the power delivery network into separate components including through-electrodes, mandrels, and insulation layers that are formed independently on the backside of the substrate. This segmentation allows each component to be fabricated using modified but still conventional processes, avoiding the need for entirely new complex manufacturing techniques.
2Power
If a backside power delivery network is implemented with conventional methods, then power delivery function is achieved, but manufacturing cost increases
Solution Approach 1:
The backside power delivery network uses standard semiconductor fabrication materials and processes (photolithography, etching, deposition, CMP) that are already universally available in existing manufacturing lines. By making the backside network multi-functional with through-electrodes serving both as structural support and electrical interconnects, the patent achieves power delivery function without requiring specialized expensive equipment or materials.
Solution Approach 2:
The patent utilizes the backside of the substrate, which would otherwise be a wasted or discarded surface, to implement the power delivery network. This recovery of unused substrate area allows power delivery functionality to be added without consuming additional valuable substrate material, thereby reducing manufacturing cost.
3Reliability
If substrate is removed to form through-electrodes, then electrical connection is improved, but manufacturing process becomes more complex
Solution Approach 1:
The patent forms mandrels on the backside of the substrate before removing the substrate material to create through-electrodes. This preliminary action of placing mandrels in advance provides precise templates for subsequent etching processes, ensuring accurate through-hole formation and reliable electrical connections while maintaining process simplicity through pre-planned fabrication steps.
Solution Approach 2:
The patent introduces mandrels as intermediary structures that facilitate the formation of through-electrodes. These mandrels serve as temporary mediators during fabrication, guiding the removal process and ensuring precise electrical connection paths are created without requiring complex direct patterning or alignment procedures.
Data Source
AI summary
A semiconductor device may include a base insulation layer, a channel layer on a first surface of the base insulation layer, a first source/drain pattern and a second source/drain pattern spaced apart from each other in a first direction on a first surface of the base insulating layer with the channel layer therebetween, a gate structure on the first surface of the base insulation layer and extending in a second direction crossing the first direction, a lower wire structure on a second surface of the base insulation layer, and a through electrode spaced apart from the gate structure with the first source/drain pattern between the through electrode and the gate structure. The through electrode may penetrate the base insulation layer and electrically connect the first source/drain pattern to the lower wire structure. The first direction may be parallel to the first surface of the base insulation layer.