Backside Power Network TSV Connection to the Epitaxial Layer

Solution Overview

Problem

Manufacturing a backside power distribution network (BSPDN) semiconductor architecture is challenging due to the complexity of connecting multilayer elements between the front and back sides of a wafer, leading to increased connection resistance, manufacturing costs, and potential misalignment issues.

Innovation Solution

A BSPDN semiconductor architecture that includes a through-silicon via (TSV) directly connecting to the epitaxial layer of the active device on the front side, eliminating intermediate layers and simplifying the manufacturing process.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If multilayer elements are used to connect the PDN on the back side with the active device on the front side, then the connection between power supply and active device is established, but the connection resistance increases and manufacturing complexity increases

Engineering Contradiction:

Improveconnection reliabilityVSAvoidmanufacturing complexity

Core Design Contradiction:

ReliabilityVSDevice complexity

Solution Approach 1:

The patent extracts and eliminates the intermediate multilayer elements (such as bump electrodes and insulating layers) from the connection path between the back-side PDN and the front-side active device. By directly connecting the TSV to the epitaxial layer, the patent removes unnecessary structural layers that contribute to manufacturing complexity while maintaining reliable electrical connection.

Inventive Principle:

Principle #2Taking out (Extraction)

Solution Approach 2:

Instead of following the conventional approach of connecting through multiple intermediate layers from back to front, the patent inverts the connection strategy by making the TSV extend directly to and connect with the epitaxial layer of the active device. This inverted approach simplifies the connection architecture by reversing the traditional multilayer connection paradigm.

Inventive Principle:

Principle #13The other way round (Inversion)

2Reliability

If multilayer elements are used to connect the PDN on the back side with the active device on the front side, then the connection between power supply and active device is established, but the connection resistance increases

Engineering Contradiction:

Improveconnection reliabilityVSAvoidconnection resistance

Core Design Contradiction:

ReliabilityVSManufacturing precision

Solution Approach 1:

The patent extracts and eliminates the intermediate multilayer elements (such as bump electrodes and insulating layers) from the connection path between the back-side PDN and the front-side active device. By directly connecting the TSV to the epitaxial layer, the patent removes unnecessary structural layers that contribute to manufacturing complexity while maintaining reliable electrical connection.

Inventive Principle:

Principle #2Taking out (Extraction)

3Ease of operation

If a conventional PDN architecture is used with signal wiring on the front side, then signal routing is provided, but routing congestion occurs and area increases

Engineering Contradiction:

Improvesignal routing capabilityVSAvoidsemiconductor device area

Core Design Contradiction:

Ease of operationVSArea of stationary object

Solution Approach 1:

The patent applies dimensionality change by moving the power distribution network from the traditional planar layout on the front side to a vertical three-dimensional structure using through-silicon vias on the back side. This spatial reorganization separates power routing from signal routing in different dimensions, eliminating routing congestion and reducing the overall device area while maintaining full signal routing capability on the front side.

Inventive Principle:

Principle #17Another dimension (Dimensionality change)

Data Source

PatentUS12557677B2Backside power distribution network semiconductor architecture using direct epitaxial layer connection and method of manufacturing the same

Publication Date: 2026.02.17 SAMSUNG ELECTRONICS CO LTD

AI summary

Provided is a backside power distribution network (BSPDN) semiconductor architecture including a wafer, a first semiconductor device provided on a first surface of the wafer, the first semiconductor device including an active device that includes an epitaxial layer, a second semiconductor device provided on a second surface of the wafer opposite to the first surface, the second semiconductor device including a power rail configured to supply power, and a through-silicon via (TSV) protruding from the power rail and extending to a level of the epitaxial layer of the active device.