Backside RC Hold Buffer Structure Using TSVs for Timing Closure
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Solution Overview
Problem
Integrated circuits face challenges with hold time issues in data capture, leading to timing conflicts and inaccurate data values due to short hold times, increased circuit area, and power consumption, exacerbated by Process-Voltage-Temperature (PVT) variations.
Innovation Solution
A semiconductor device incorporating a Resistance-Capacitance (RC) structure on the backside of the substrate, utilizing Through-Silicon Vias (TSVs) to connect frontside flip-flops, which includes conductive patterns and vias with alternating signal and power conductive layers, providing an RC delay as a hold buffer.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a hold buffer is implemented using transistor components to ensure hold time, then the hold time of data values is ensured, but the circuit area increases
Solution Approach 1:
The patent replaces the traditional transistor-based hold buffer (mechanical/electronic component system) with an RC circuit structure consisting of resistive and capacitive elements. This substitution achieves the same hold time function while occupying less circuit area, as passive RC structures can be implemented more compactly than active transistor buffers.
Solution Approach 2:
The patent changes the fundamental parameters of the hold buffer by transitioning from active transistor components to passive RC elements with specific resistance and capacitance values. By carefully selecting and adjusting these parameters, the desired hold time is achieved with reduced area occupation compared to transistor-based implementations.
2Reliability
If a hold buffer is implemented using transistor components to ensure hold time, then the hold time of data values is ensured, but power consumption increases
Solution Approach 1:
The patent replaces the energy-consuming transistor-based hold buffer with a passive RC circuit structure. Passive components do not consume power in the same manner as active transistor components, thereby reducing overall power consumption while maintaining the hold time function through the natural charging and discharging characteristics of the RC network.
Solution Approach 2:
The patent employs simple passive RC elements that are less resource-intensive compared to complex transistor-based buffers. These passive components require minimal energy to operate and can be easily integrated into the circuit without significant power overhead, effectively reducing the energy cost of ensuring hold time.
3Reliability
If a hold buffer is implemented using transistor components, then the hold time of data values is ensured, but design complexity increases due to PVT variation
Solution Approach 1:
The patent simplifies the design by changing from transistor parameters (which are highly sensitive to PVT variations) to passive RC parameters. Resistance and capacitance values are less susceptible to process, voltage, and temperature variations compared to transistor characteristics, thereby reducing design complexity and making hold time assurance more predictable across different operating conditions.
Solution Approach 2:
The patent uses passive RC components that exhibit more uniform and predictable behavior across process variations compared to transistor components. This homogeneity in performance characteristics reduces the complexity of designing for PVT variations, as the RC network maintains more consistent behavior under different operating conditions.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The RC structure ensures hold time while reducing circuit area and power consumption, minimizing PVT deviations, and streamlining design turnaround time.
Implementation Method 1
a Resistance-Capacitance (RC) structure disposed on a backside of the substrate... conductive patterns of neighboring conductive layers, among the plurality of conductive layers, may extend in directions intersecting each other
Data Source
AI summary
A semiconductor device includes: a plurality of standard cells disposed on a frontside of a substrate, and respectively including at least one gate structure and at least one active region; a frontside buffer cell disposed on the frontside of the substrate and between at least some of the plurality of standard cells, and including at least one a Through-Silicon Via (TSV) penetrating through the substrate; and a backside buffer cell disposed on a backside of the substrate, which includes: a plurality of conductive layers disposed on the backside of the substrate; and a plurality of vias connecting the plurality of conductive layers; and an insulating layer surrounding the plurality of conductive layers and the plurality of vias, wherein each of the plurality of conductive layers includes signal conductive patterns electrically connected to the at least one TSV, and power conductive patterns electrically connected to a power source.