Backside S/D Contact Depth Layout for Uniform Source/Drain Regions
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Solution Overview
Problem
Current semiconductor technologies face challenges in forming backside S/D contact placeholder structures for high-density and high-performance devices with varying gate structure spacings, leading to non-uniform S/D regions.
Innovation Solution
The semiconductor structure incorporates deep and shallow backside S/D contact placeholder structures tailored for high-density and high-performance devices, respectively, with different depths and widths to ensure uniform S/D regions.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If a single depth backside S/D contact placeholder structure is used for both high-density and high-performance devices, then the manufacturing process is simplified, but non-uniform S/D regions are formed leading to degraded device performance
Solution Approach 1:
The backside S/D contact placeholder structures are segmented into different depth categories: deep placeholder structures for high-density devices with short channel lengths and shallow placeholder structures for high-performance devices with long channel lengths. This segmentation allows each device type to receive appropriately tailored placeholder structures that ensure uniform S/D regions while maintaining distinct manufacturing processes for different device performance requirements
Solution Approach 2:
Different depth backside S/D contact placeholder structures are provided at different locations on the substrate according to the specific device requirements. High-density devices receive deep placeholder structures while high-performance devices receive shallow placeholder structures, ensuring that each local region has the quality characteristics optimized for its specific device type
2Manufacturing precision
If deep backside S/D contact placeholder structures are used for high-density devices with short channel lengths, then uniform S/D regions are achieved, but the manufacturing complexity increases due to varying structure depths
Solution Approach 1:
The backside S/D contact placeholder structures are formed preliminarily before the frontside processing steps. By pre-forming the placeholder structures at the backside with appropriate depths for different device types, the subsequent frontside processing can proceed uniformly without needing to accommodate varying placeholder depths, thereby reducing overall manufacturing complexity while maintaining S/D region uniformity
Data Source
AI summary
A semiconductor structure is provided that includes backside S/D contact placeholder structures that have different depths. Notably, a semiconductor structure is provided that includes a deep backside S/D contact placeholder structure for high-density devices having short channel lengths and a narrow space between each of the high-density devices, and a shallow backside S/D contact placeholder structure for high-performance devices having long channel lengths and a wide space between each of the high-performance devices.