Backside Trench and TSV Structure for Die Warpage Control

Resolve Bottlenecks,
Find Innovative SolutionsGenerate Solutions

Solution Overview

Problem

The semiconductor industry faces challenges in managing die warpage during the packaging process, which affects integration density and reliability of semiconductor devices, particularly in Package-on-Package (PoP) technology.

Innovation Solution

Implementing warpage tuning structures through substrate vias (TSVs) in the backside of the die, filled with either tensile or compressive materials to control die warpage, improving warpage control and heat dissipation.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If traditional packaging methods are used without warpage tuning structures, then the manufacturing process is simpler, but die warpage occurs affecting planarity and reliability

Engineering Contradiction:

Improvedie planarityVSAvoidpackaging structure

Core Design Contradiction:

Manufacturing precisionVSDevice complexity

Solution Approach 1:

The substrate is divided into multiple regions with different material compositions or structures. Specifically, the substrate includes a first region with a first material and a second region with a second material, allowing different areas to have different mechanical properties to compensate for warpage while maintaining overall structural integrity

Inventive Principle:

Principle #1Segmentation

Solution Approach 2:

Different regions of the substrate are assigned different materials or structures tailored to local warpage compensation needs. The first region has different properties than the second region, enabling localized control over stress distribution and planarity without affecting the entire substrate uniformly

Inventive Principle:

Principle #3Local quality

2Reliability

If warpage tuning structures are added to control die warpage, then planarity and reliability improve, but manufacturing complexity increases

Engineering Contradiction:

Improvepackage reliabilityVSAvoidsubstrate structure

Core Design Contradiction:

ReliabilityVSDevice complexity

Solution Approach 1:

The substrate serves multiple functions simultaneously: it provides mechanical support, electrical connection, and warpage compensation. By integrating warpage tuning structures into the substrate itself rather than adding separate components, the substrate becomes a multi-functional element that improves reliability without proportionally increasing complexity

Inventive Principle:

Principle #6Universality (Multi-functionality)

Solution Approach 2:

The warpage tuning structures are merged with the substrate to form an integrated structure. The substrate and warpage compensation features are combined into a single component rather than being separate parts, reducing assembly steps and overall system complexity while maintaining reliability benefits

Inventive Principle:

Principle #5Merging (Combining)

3Temperature

If multiple material-filled trench structures are implemented, then warpage control and heat dissipation improve, but manufacturing steps increase

Engineering Contradiction:

Improveheat dissipationVSAvoidmanufacturing throughput

Core Design Contradiction:

TemperatureVSProductivity

Solution Approach 1:

The trenches are formed and filled with materials during the substrate fabrication process before the die is mounted. This preliminary preparation of warpage tuning and heat dissipation structures eliminates the need for additional post-assembly steps, maintaining manufacturing throughput while achieving thermal management goals

Inventive Principle:

Principle #10Preliminary action

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

Enhances warpage control and reliability of semiconductor packages by improving planarity and electrical connections, leading to increased yield and performance.

Implementation Method 1

the one or more material-filled trench structures extending from a second surface of the die into the die, the one or more material-filled trench structures being electrically isolated from the through substrate vias

Methodology Applied

Scientific EffectThermal expansion: Thermal Expansion

Implementation Method 2

Methodology Applied

Scientific EffectThermal conduction: Conduction (thermal)

Data Source

PatentUS20250349774A1Semiconductor device and method

Publication Date: 2025.11.13 TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD

AI summary

An embodiment is a device including a first die and a substrate including a first surface and a second surface opposite the first surface. The device also includes an active device on the first surface of the substrate. The device also includes a first interconnect structure on the first surface of the substrate. The device also includes a through substrate via extending through the first interconnect structure and the substrate to the second surface of the substrate, the through substrate via being electrically coupled to metallization patterns in the first interconnect structure. The device also includes one or more material-filled trench structures extending from the second surface of the substrate into the substrate, the one or more material-filled trench structures being electrically isolated from the through substrate via.