Backside Power Rail Structure for Dense, Low-Leakage ICs
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Solution Overview
Problem
Current integrated circuit (IC) devices face challenges in achieving high integration density and electrical reliability due to limitations in wiring structure design, which affects their miniaturization, multifunctionality, and operating efficiency.
Innovation Solution
The IC device incorporates a substrate with fin-type active regions, a device isolation film, an insulating liner structure, and a power rail system that includes a via power rail and a backside power rail with a protrusion rail, extending through the substrate and isolation film to enhance integration density and reliability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a conventional power rail structure is used, then the device complexity is low, but the integration density and electrical reliability are insufficient
Solution Approach 1:
The power rail system is segmented into multiple functional components: a first power rail structure extending through the substrate, a second power rail structure formed in the trench region, and connection structures linking them. This segmentation allows each component to be optimized independently for its specific function, improving overall electrical reliability while managing complexity through modular design
Solution Approach 2:
The patent transitions from conventional two-dimensional power rail layouts to a three-dimensional structure by forming power rails that extend through the substrate depth and utilizing trench regions. The first power rail structure is positioned at a first depth while the second power rail structure is positioned at a second depth, creating vertical stacking that increases integration density without proportionally increasing planar complexity
2Productivity
If wiring structures are simplified for ease of manufacture, then manufacturing is easier, but integration density and operating speed are limited
Solution Approach 1:
The method performs preliminary actions by forming the first power rail structure and insulating liner structure through the substrate before forming the trench region and second power rail structure. Connection structures are then formed to link these pre-positioned elements. This sequential preliminary action approach enables complex three-dimensional power distribution while maintaining manufacturing feasibility through staged fabrication processes
Solution Approach 2:
The patent implements nesting by placing the second power rail structure within the trench region that is formed in the substrate. The connection structures are nested to link the first and second power rail structures through the insulating liner structure. This nested arrangement maximizes space utilization and integration density while following logical fabrication sequences
Data Source
AI summary
An integrated circuit device includes a fin-type active region that extends from a substrate and in a first lateral direction, a device isolation film on a trench region on the substrate, an insulating liner structure that extends through the substrate in a vertical direction and contacts the device isolation film at a first vertical level, a via power rail that extends through the device isolation film in the vertical direction and comprising a first bottom surface at a second vertical level, and a backside power rail comprising a main rail and a protrusion rail, where the main rail extends through the substrate and the insulating liner structure in the vertical direction, and where the protrusion rail extends from the main rail toward the via power rail.