Backup Circuit for Multi-Level Flash Memory Data Integrity

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Solution Overview

Problem

Conventional flash memory systems incorporating multi-level cells are prone to the loss of Least Significant Bit (LSB) data during the programming of Most Significant Bit (MSB) data, as the previously programmed LSB data is not retained in the buffer memory and cannot be easily repaired.

Innovation Solution

A memory system with a backup memory that temporarily stores LSB data before programming MSB data, allowing for re-programming of LSB data if a failure occurs during the MSB programming process, and utilizing error correction codes to repair damaged LSB data.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Quantity of substance

If multi-level cells are used to increase storage capacity, then data storage capacity is improved, but reliability deteriorates due to LSB data loss during MSB programming

Engineering Contradiction:
Improvedata storage capacityVSAvoiddata integrity
Core Design Contradiction:
Quantity of substanceVSReliability

Solution Approach 1:

The patent applies preliminary action by storing the LSB data in the buffer memory before performing the MSB programming operation. This preliminary preservation of LSB data ensures that if programming failure occurs during MSB writing, the LSB data is already saved and can be re-programmed without loss, thus maintaining data integrity while enabling multi-level cell storage.

Inventive Principle:
Principle #10Preliminary action

2Device complexity

If LSB data is not stored in buffer memory to reduce complexity, then device complexity is reduced, but reliability deteriorates due to inability to repair damaged LSB data

Engineering Contradiction:
Improvebuffer memory structureVSAvoidLSB data repair capability
Core Design Contradiction:
Device complexityVSReliability

Solution Approach 1:

The patent implements preliminary action by pre-storing LSB data in the buffer memory before MSB programming. This simple preliminary step enables subsequent repair capability without requiring complex backup mechanisms, achieving reliability improvement with minimal additional complexity.

Inventive Principle:
Principle #10Preliminary action

Solution Approach 2:

The patent uses copying by creating a copy of the LSB data in the buffer memory before the critical MSB programming operation. This copy serves as a backup that can be used to repair damaged LSB data, providing reliability without requiring complex redundant storage structures.

Inventive Principle:
Principle #26Copying

3Productivity

If conventional programming operation is used without backup, then programming time is reduced, but reliability deteriorates due to data loss on programming failure

Engineering Contradiction:
Improveprogramming speedVSAvoiddata retention on failure
Core Design Contradiction:
ProductivityVSReliability

Solution Approach 1:

The patent applies preliminary action by saving LSB data in the buffer memory before MSB programming. This preliminary preservation enables fast programming operations while ensuring data retention capability, as the backup is prepared in advance without adding significant time overhead to the programming process.

Inventive Principle:
Principle #10Preliminary action

Data Source

PatentUS7594157B2Memory system with backup circuit and programming method
Publication Date: 2009.09.22 SAMSUNG ELECTRONICS CO LTD
  • US7594157B2 patent drawing
  • US7594157B2 patent drawing
  • US7594157B2 patent drawing

AI summary

Provided are a memory system and a program method. The memory system includes a flash memory and a memory controller. The flash memory stores first bit data and then stores second bit data in a multi-level memory cell. The memory controller includes a buffer memory temporarily storing the first bit data and the second bit data, and a backup memory storing the first bit data while the flash memory is storing the second bit data. The backup memory re-programs the first bit data to the flash memory upon detecting a program failure associated with the storing the second bit data.