Annular Baffle Plate Layout for Uniform Substrate Etching
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Solution Overview
Problem
In semiconductor processing, etching unevenness occurs due to factors such as the direction of patterns on the substrate, leading to inconsistent etching amounts across different regions.
Innovation Solution
A substrate processing apparatus with a chamber, lower and upper electrodes, and an annular baffle plate featuring distinct arc regions with varying slot configurations and aperture ratios to control the etching process uniformly.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a conventional baffle plate with uniform structure is used, then the device complexity is low, but etching unevenness occurs across different substrate regions
Solution Approach 1:
The baffle plate is divided into multiple arc regions (first, second, third, fourth arc regions) with different slot aperture ratios. Specifically, the first and third arc regions have a first aperture ratio, while the second and fourth arc regions have a second aperture ratio that is greater than the first. This local variation in quality allows different regions of the substrate to receive appropriately adjusted plasma flux, improving etching uniformity across the entire substrate surface.
Solution Approach 2:
The baffle plate structure is segmented into distinct functional regions with different characteristics. Each arc region contains multiple slots arranged in specific patterns, and the slots in different arc regions have different aperture ratios. This segmentation enables independent optimization of plasma distribution for different substrate areas, resolving the etching uniformity issue without requiring complete redesign of the entire system.
2Manufacturing precision
If the baffle plate has different aperture ratios in different arc regions, then etching uniformity is improved, but the manufacturing complexity increases
Solution Approach 1:
The baffle plate is divided into multiple arc regions (first, second, third, fourth arc regions) with different slot aperture ratios. Specifically, the first and third arc regions have a first aperture ratio, while the second and fourth arc regions have a second aperture ratio that is greater than the first. This local variation in quality allows different regions of the substrate to receive appropriately adjusted plasma flux, improving etching uniformity across the entire substrate surface.
Solution Approach 2:
The baffle plate structure is segmented into distinct functional regions with different characteristics. Each arc region contains multiple slots arranged in specific patterns, and the slots in different arc regions have different aperture ratios. This segmentation enables independent optimization of plasma distribution for different substrate areas, resolving the etching uniformity issue without requiring complete redesign of the entire system.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The apparatus adjusts etching amounts across different substrate portions, ensuring uniformity by optimizing gas distribution and plasma residence time through the baffle plate design.
Implementation Method 1
The apparatus adjusts etching amounts across different substrate portions, ensuring uniformity by optimizing gas distribution and plasma residence time through the baffle plate design.
Data Source
AI summary
A processing apparatus comprising a chamber including a process space therein, a lower electrode disposed inside the chamber, an upper electrode structure disposed above the lower electrode to face the lower electrode, and an annular baffle plate disposed to surround the process space, wherein the annular baffle plate includes a first arc region and a second arc region which are disposed adjacent to each other along an annular arc and do not overlap each other, the first arc region includes a plurality of first slots, and the second arc region includes a plurality of second slots, and a first aperture ratio occupied by the first slots in the first arc region is different from a second aperture ratio occupied by the second slots in the second arc region.