Semiconductor Baking Chamber Airflow Control to Eliminate Wafer Vortices

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Solution Overview

Problem

The existing baking apparatuses in semiconductor processing face challenges in removing vortices near the wafer, which leads to uneven airflow distribution and increased contamination of the wafer due to residual fumes.

Innovation Solution

The proposed baking apparatus includes a processing chamber with a ring shutter, a baking plate for supporting the wafer, and a system of flow controllers to control the airflow and exhaust fumes. The active flow controller, first auxiliary flow controller, and second auxiliary flow controller work together to manage the gas flow, preventing the formation of vortices near the wafer and improving airflow distribution.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Object-generated harmful factors

If gas is introduced to exhaust fumes from the processing chamber, then fumes are discharged, but vortices form near the wafer causing uneven airflow distribution

Engineering Contradiction:
Improvefume discharge efficiencyVSAvoidairflow velocity distribution uniformity
Core Design Contradiction:
Object-generated harmful factorsVSManufacturing precision

Solution Approach 1:

The flow controller is divided into multiple independent flow control units positioned at different locations around the processing chamber. Each unit can independently adjust gas flow to specific regions, enabling localized airflow optimization that prevents vortex formation while maintaining overall fume discharge efficiency.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

Different regions of the processing chamber are provided with differentiated gas flow characteristics through strategically positioned flow control units. The gas flow velocity and direction are locally optimized near the wafer to prevent vortex formation, while other regions maintain sufficient flow for effective fume exhaust.

Inventive Principle:
Principle #3Local quality

2Productivity

If gas flow is increased to improve fume exhaust, then fume discharge performance improves, but wafer contamination increases due to vortex formation

Engineering Contradiction:
Improvefume exhaust performanceVSAvoidwafer contamination
Core Design Contradiction:
ProductivityVSObject-affected harmful factors

Solution Approach 1:

The flow control units are configured to dynamically adjust gas flow characteristics based on real-time process conditions. During baking operations, the system optimizes flow patterns to prevent vortex formation and wafer contamination, while maintaining high fume exhaust capability when needed.

Inventive Principle:
Principle #15Dynamics

Solution Approach 2:

The flow control units act as intermediary devices between the gas supply system and the processing chamber environment. They mediate the gas flow to eliminate harmful vortices while preserving the beneficial fume exhaust function, thereby protecting the wafer from contamination.

Inventive Principle:
Principle #24Intermediary (Mediator)

3Device complexity

If a simple exhaust system is used, then device complexity is reduced, but airflow control precision is insufficient to prevent vortices

Engineering Contradiction:
Improveexhaust system structureVSAvoidairflow control precision
Core Design Contradiction:
Device complexityVSManufacturing precision

Solution Approach 1:

Rather than using a single complex exhaust system, the invention segments the flow control function into multiple simpler, independently controllable units. This modular approach achieves precise airflow control and vortex prevention while keeping individual components relatively simple and the overall system manageable.

Inventive Principle:
Principle #1Segmentation

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This solution effectively reduces the residual time of fumes inside the processing chamber, minimizes contamination on the wafer, and enhances the exhaust performance of fumes, leading to improved semiconductor device quality and reduced maintenance cycles.

Implementation Method 1

at least one flow controller for controlling a flow of the gas introduced through the plurality of inlets. The at least one flow controller may be configured to move in a first direction perpendicular to an upper surface of the baking plate

Methodology Applied
Scientific EffectGas flow control: Convection

Implementation Method 2

a discharge unit connected to the processing chamber and configured to discharge fumes generated while the photoresist film is cured

Methodology Applied
Scientific EffectFume exhaust: Convection

Data Source

PatentUS12211711B2Baking apparatus
Publication Date: 2025.01.28 SAMSUNG ELECTRONICS CO LTD
  • US12211711B2 patent drawing
  • US12211711B2 patent drawing
  • US12211711B2 patent drawing

AI summary

A baking apparatus, may include a processing chamber including a lower chamber and an upper chamber connected by a ring shutter; a baking plate in the processing chamber adjacent to a region in which the lower chamber and the ring shutter overlap; an active flow controller including a first module and a second module in the lower chamber adjacent to the baking plate; a first auxiliary flow controller on a lower part of the ring shutter, adjacent to the lower chamber; and a second auxiliary flow controller in the upper chamber adjacent to the ring shutter. The active controller may be configured to move based on movement of the first module in a first direction perpendicular to an upper surface of the baking plate. The active flow controller may be configured to control airflow around the second module by movement of the second module.