Balun Circuit IPD Integration for Substrate Area Reduction
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Solution Overview
Problem
Conventional Balun circuits manufactured by the low temperature co-fired ceramic (LTCC) process require a larger substrate area due to the need for separate regions for the Balun circuit and RF transceiver chip, leading to increased space occupancy in communication devices.
Innovation Solution
A Balun circuit integrated with passive devices (IPD) is directly disposed on the RF transceiver chip, utilizing a coplanar spiral structure with interlaced half coils and intersecting connections to achieve signal transformation, reducing the substrate area required.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If Balun circuit is manufactured by LTCC process, then signal transformation function is achieved, but substrate area increases
Solution Approach 1:
The patent merges the Balun circuit and RF transceiver chip into a single integrated structure where the Balun circuit is directly disposed on the RF transceiver chip. This eliminates the need for separate surface-mount connections and reduces the substrate area required for both components.
Solution Approach 2:
The patent transitions from a planar layout where Balun circuit and RF transceiver occupy separate regions on the substrate to a vertical integration approach where the Balun circuit is disposed directly on top of the RF transceiver chip, utilizing the third dimension (height/layer) to reduce footprint area.
2Ease of manufacture
If separate regions are reserved for Balun circuit and RF transceiver chip, then electrical connection is achieved, but space occupancy increases
Solution Approach 1:
The patent combines the Balun circuit and RF transceiver chip into a single integrated device, eliminating the need for separate reserved regions and surface-mount connections. The Balun circuit is directly disposed on the RF transceiver chip, achieving electrical connection while minimizing space occupancy.
3Ease of operation
If larger substrate area is used, then component disposition is simplified, but internal space of communication device increases
Solution Approach 1:
The patent utilizes vertical integration by disposing the Balun circuit directly on the RF transceiver chip, transitioning from a horizontal layout requiring large substrate area to a vertical arrangement that reduces the footprint and internal space of the communication device.
Data Source
AI summary
A Balun circuit manufactured by integrate passive device (IPD) process is provided. The Balun circuit includes a substrate, a first coplanar spiral structure, and a second coplanar spiral structure. At least two first left half coils of the first coplanar spiral structure are electrically connected to the corresponding two first right half coils through a first intersecting structure. At least two second left half coils of the second coplanar spiral structure are electrically connected to the corresponding two second right half coils through a second intersecting structure. The two ends of the second coplanar spiral structure are electrically connected to the innermost second left half coil and the second right half coil respectively. The first left half coils and the second left half coils are interlaced, and so are the first right half coils and the second right half coils interlaced.