Buffer Allocation Management Circuit for Wear Leveling
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Solution Overview
Problem
Current memory system controllers face inefficiencies in managing memory operations, particularly in wear leveling and write amplification, which can lead to reduced performance and lifespan of solid state drives due to uneven distribution of program and erase cycles across memory cells.
Innovation Solution
The implementation of a memory system controller with a buffer allocation management (BAM) circuit that prioritizes allocation of tags for internal static random access memory (ISBs) over dynamic random access memory (DRAM) buffers, along with a switch that includes a buffer tag pool and a host-memory translation circuitry to optimize memory operations, such as wear leveling and write amplification.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If traditional buffer allocation methods are used in memory system controllers, then memory operations can be performed, but wear leveling efficiency is reduced and write amplification increases
Solution Approach 1:
The patent changes the allocation parameters by introducing a priority-based tag allocation mechanism where ISB tags are assigned higher priority than DRAM buffer tags. This parameter change in allocation strategy enables better wear leveling control while maintaining high memory operation efficiency, as the controller can dynamically manage tag allocation based on wear leveling needs rather than using fixed allocation rules
Solution Approach 2:
The patent introduces a buffer allocation management (BAM) circuit as an intermediary component between the host-memory translation circuitry and the buffers. This BAM circuit acts as a mediator that intelligently allocates tags to ISBs versus DRAM buffers, enabling optimized wear leveling and reduced write amplification without compromising overall memory operation productivity
2Adaptability or versatility
If more tags are allocated to DRAM buffers, then buffer availability increases, but wear leveling performance deteriorates
Solution Approach 1:
The patent implements a dynamic tag allocation mechanism where the BAM circuit can adjust tag allocation between ISBs and DRAM buffers based on real-time system conditions and wear leveling requirements. This dynamic approach ensures that buffer availability is maintained while wear leveling performance is optimized, as the system can adaptively shift allocation priorities rather than using static allocation rules
3Reliability
If uniform distribution of program and erase cycles is implemented, then memory cell wear is reduced, but memory operation complexity increases
Solution Approach 1:
The patent enables the memory system to self-manage wear leveling through the BAM circuit's automatic tag priority allocation mechanism. The system self-adjusts tag allocation based on wear leveling needs without requiring complex external management, reducing memory cell wear while keeping the control logic integrated and manageable within the controller itself
Data Source
AI summary
Memory system controllers can include hardware masters, first buffers, and a switch coupled to the hardware masters and to the first buffers. The switch can include second buffers and a buffer allocation management (BAM) circuit. The BAM circuit can include a buffer tag pool. The buffer tag pool can include tags, each identifying a respective first buffer or a respective second buffer. The BAM circuit can be configured to allocate a tag to a hardware master in response to an allocation request from the hardware masters. The BAM circuit can be configured to prioritize allocation of a tag identifying a second buffer over a tag identifying a first buffer.