Band Gap Reference Voltage Control for Memory Temperature Slope
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Solution Overview
Problem
Flash memory devices experience decreased programming speed and accuracy due to temperature variations, as transistors become weaker at higher temperatures, leading to inconsistent programming times and potential operational errors.
Innovation Solution
A regulator component is employed to adjust the band gap reference voltage based on operating temperature, increasing the voltage on bit-lines and word-lines to compensate for transistor weakness, while maintaining a consistent current level to prevent overcompensation and errors, using trim bits to control the temperature slope and reference voltage.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If the voltage on bit-line and word-line is increased to compensate for transistor weakness at high temperature, then programming speed is improved, but programming accuracy deteriorates due to overcompensation
Solution Approach 1:
The patent implements dynamic voltage compensation by adjusting the bit-line and word-line voltages based on the actual operating temperature. The voltage compensation amount is not fixed but varies dynamically with temperature conditions, allowing the system to optimize between speed and accuracy for each operating point. This resolves the contradiction by making the compensation adaptive rather than static.
Solution Approach 2:
The patent changes the voltage parameters (bit-line voltage and word-line voltage) as a function of temperature. By establishing a temperature-voltage relationship, the system adjusts the voltage parameters to maintain optimal programming performance across different temperature conditions, preventing both undercompensation at high temperature and overcompensation at low temperature.
2Productivity
If voltage compensation is applied to maintain programming speed at high temperature, then programming speed is improved, but compensation accuracy deteriorates due to die-to-die variations and simulation differences
Solution Approach 1:
The patent incorporates feedback mechanisms where the actual programming results and temperature conditions are monitored, and the voltage compensation is adjusted accordingly. This feedback loop allows the system to learn from actual device behavior rather than relying solely on simulation models, compensating for die-to-die variations and simulation inaccuracies.
Solution Approach 2:
The system performs self-calibration and self-adjustment by monitoring its own programming performance and temperature conditions. The voltage compensation parameters are automatically adjusted based on actual device characteristics rather than predetermined simulation values, allowing each device to optimize its own operation despite manufacturing variations.
3Power
If band gap reference voltage is increased to compensate for temperature effects, then voltage generation capability is improved, but current level offset increases causing programming errors
Solution Approach 1:
The patent applies different quality adjustments to different parts of the voltage reference system. Specifically, it adjusts the band gap reference voltage independently while maintaining separate control over the current levels in the band gap circuit. This allows the voltage generation capability to be enhanced without proportionally increasing the current offset, as the current path is separately managed to prevent excessive current draw.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This solution enhances programming speed and accuracy by maintaining consistent voltage and current levels across temperatures, reducing the risk of operational errors and extending the lifespan of flash memory devices.
Implementation Method 1
a desired reference voltage level can be determined that can be based on an operating temperature slope associated with the memory device
Implementation Method 2
an amount of compensation and thus an amount of increase in a voltage level in a particular band gap circuit can be based on the operating temperature slope level associated with the memory and transistors included therein
Data Source
AI summary
Systems and/or methods are presented that can facilitate regulating performance of operations in a memory device based on controlling an operating temperature slope associated with the memory device. A regulator component can facilitate controlling the operating temperature slope level and controlling a reference voltage(s) associated with a word-line(s) and/or bit-line(s) to facilitate execution of operations in a memory, while also controlling a respective current level(s) associated with the reference voltage to minimize errors in the memory or harm to the memory. The reference voltage can be controlled based on a first resistance and the current level can be controlled based on a second resistance that can be based on the first resistance. An analyzer component can facilitate determining a desired operating temperature slope level. Trim bits can be employed to facilitate setting the first resistance and/or the second resistance.