Bandgap Reference Voltage Generation Circuit with Dynamic Mode Switching
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Solution Overview
Problem
Bandgap reference voltage generation circuits face challenges in operating stably across varying supply voltage ranges, particularly experiencing transistor damage at high voltages and difficulty in low voltage designs, making it hard to maintain a constant reference voltage amidst temperature and process changes.
Innovation Solution
A bandgap reference voltage generation system that includes a common mode voltage generator, a bandgap reference voltage generation circuit with PMOS and LDMOS transistors, and a switch controller to operate transistors in linear or saturation regions based on voltage modes, using a cascode configuration to manage voltage ranges from 1.1 to 5.5V, preventing breakdown and ensuring stable operation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If a bandgap reference voltage generation circuit designed for high supply voltage range (1.5 to 5.0 V) is applied to low supply voltage range (1.1 to 1.5 V), then the circuit cannot operate normally, but redesigning for low voltage increases vulnerability to breakdown at high voltages
Solution Approach 1:
The patent implements dynamic voltage mode switching that adapts the circuit configuration based on the supply voltage range. A voltage detection circuit monitors the supply voltage and controls switches to configure the bandgap reference circuit appropriately for either high voltage mode (1.5-5.0V) or low voltage mode (1.1-1.5V), enabling the same circuit to operate reliably across both ranges without permanent damage
Solution Approach 2:
The patent introduces intermediate control circuits including voltage detection circuitry and switch control logic that mediate between the supply voltage and the bandgap reference circuit. These intermediary components detect voltage levels and activate appropriate protection or operational configurations, preventing direct exposure of transistors to incompatible voltage conditions
2Reliability
If high supply voltage is applied to transistors in a bandgap reference circuit, then breakdown voltage damages transistors permanently, but lowering supply voltage limits operational flexibility
Solution Approach 1:
The patent implements preliminary protection actions by detecting supply voltage levels before they can cause damage. The voltage detection circuit monitors incoming voltage and preemptively configures the circuit through controlled switches to prevent breakdown conditions, acting before any harmful effect can occur to the transistors
Solution Approach 2:
The patent changes operational parameters dynamically by switching between different circuit configurations based on supply voltage magnitude. The switch control circuit adjusts connectivity and operational modes according to detected voltage levels, transforming the circuit's electrical characteristics to match the applied voltage range and prevent breakdown
Data Source
AI summary
A bandgap reference voltage generation system includes a common mode voltage generator, a bandgap reference voltage generation circuit, and a switch controller. The bandgap reference voltage generation circuit includes a plurality of transistors having source terminals respectively connected to drain terminals of a plurality of PMOS transistors. The switch controller provides a ground voltage to the bandgap reference voltage generation circuit in a first mode and a common mode voltage to the bandgap reference voltage generation circuit in a second mode. The bandgap reference voltage generation circuit causes the plurality of the transistors to operate in a linear region by providing the common mode voltage to gate electrodes of the plurality of the transistors in the first mode and a saturation region by providing the ground voltage to the gate electrodes of the plurality of the transistors in the second mode.