Bandgap Voltage Monitoring for Reliable Vehicle Memory Operation
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Solution Overview
Problem
Semiconductor devices in vehicles, such as memory devices, face reliability issues due to varying voltage levels during operations like data programming, reading, and erasing, especially in severe environmental conditions like temperature and humidity changes, which can lead to operation failures potentially causing accidents.
Innovation Solution
An abnormal voltage monitoring device is developed, comprising a voltage divider, bandgap reference generation circuits, and a monitoring circuit that compares the input voltage to a reference voltage, generating an alarm signal to ensure the voltage remains within a specific range, with a control logic circuit providing feedback to adjust the voltage as needed.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a voltage monitoring device is implemented to ensure voltage remains within a specific range, then reliability is improved, but device complexity increases
Solution Approach 1:
The monitoring circuit is integrated within the voltage generator block, combining voltage generation and monitoring functions into a single unified circuit. This integration reduces overall device complexity while maintaining reliability through continuous voltage monitoring during memory operations.
Solution Approach 2:
The monitoring circuit continuously compares the input voltage with a reference voltage and generates an alarm signal when voltage deviates from the acceptable range. This feedback mechanism ensures operational reliability by detecting abnormal voltages that could cause memory operation failures, particularly during program, read, and erase operations.
2Measurement precision
If bandgap reference generation circuits are used to generate precise reference voltage, then measurement precision is improved, but manufacturing precision requirements increase
Solution Approach 1:
The bandgap reference generation circuit utilizes the temperature-independent properties of the bandgap voltage to generate a stable reference voltage that maintains measurement precision across varying environmental conditions. This approach achieves high voltage measurement precision without requiring extremely tight manufacturing tolerances, as the bandgap effect naturally compensates for temperature variations.
Solution Approach 2:
The reference voltage generated by the bandgap circuit is specifically tailored for voltage monitoring purposes, providing locally optimized precision for the monitoring function. This dedicated reference voltage ensures accurate detection of abnormal voltages during memory operations without requiring the entire system to meet high precision manufacturing standards.
3Reliability
If voltage monitoring is implemented during memory operations, then operational reliability is improved, but use of energy increases
Solution Approach 1:
The monitoring circuit operates continuously during memory operations (program, read, erase) to ensure voltage remains within acceptable ranges. This continuous monitoring improves operational reliability by detecting voltage anomalies in real-time, preventing operation failures that could occur due to voltage deviations during critical memory operations.
Solution Approach 2:
The monitoring circuit uses the existing input voltage and generates a reference voltage through the bandgap circuit, performing self-contained voltage comparison and alarm generation without requiring additional external power sources or complex support circuits. This self-service approach minimizes additional energy consumption while maintaining continuous voltage monitoring during memory operations.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively monitors and adjusts voltages applied to memory cells, enhancing the reliability of semiconductor devices in vehicles by preventing operation failures and ensuring stable performance across varying environmental conditions.
Implementation Method 1
a voltage generator configured to generate an input voltage to be applied to the memory cell using a first bandgap reference generation circuit
Implementation Method 2
a second bandgap reference generation circuit that is configured to generate the reference voltage differently than the first bandgap reference generation circuit is configured to generate the input voltage
Implementation Method 3
a voltage divider configured to receive an input voltage to be applied to a memory cell, from a voltage generator comprising a first bandgap reference generation circuit, and configured to output a first distribution voltage based on the input voltage
Implementation Method 4
a monitoring circuit configured to receive the first distribution voltage from the voltage divider and the reference voltage from the second bandgap reference generation circuit, and configured to output an alarm signal responsive to comparing a voltage level of the first distribution voltage with that of the reference voltage
Data Source
AI summary
The present disclosure provides an abnormal voltage monitoring device, a storage device, and a vehicle. The abnormal voltage monitoring device comprises a voltage divider configure to receive an input voltage from a voltage generator and output a first distribution voltage based on the input voltage, a second bandgap reference generation circuit configured to output a reference voltage, and a monitoring circuit configured to receive the first distribution voltage from the voltage divider and the reference voltage from the second bandgap reference generation circuit, and output an alarm signal responsive to comparing a voltage level of the first distribution voltage with that of the reference voltage. The voltage generator comprises a first bandgap reference generation circuit, and the second bandgap reference generation circuit is configured to generate the reference voltage differently than the first bandgap reference generation circuit.