Bandgap Voltage Regulator for Semiconductor Memory Bit Line Stability
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Solution Overview
Problem
Existing voltage regulators for semiconductor memory cells are highly dependent on transistor dimensions, process parameters, and temperature, leading to unstable bit line voltage during memory readout operations.
Innovation Solution
A voltage regulator comprising an inverter, a feedback transistor, and a band gap reference voltage source, where the band gap reference voltage source stabilizes the inverter input, making the bit line voltage independent of operating voltage, temperature, and process parameters.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Device complexity
If a conventional voltage regulator using a NOR gate or inverter is used, then the circuit is simple, but the bit line voltage becomes highly dependent on transistor dimensions, process parameters, and temperature
Solution Approach 1:
The patent changes the reference voltage parameter from a conventional inverter threshold voltage (which varies with process and temperature) to a bandgap reference voltage. The bandgap reference circuit generates a temperature-compensated reference voltage by combining a proportional-to-absolute-temperature (PTAT) voltage and a complementary-to-absolute-temperature (CTAT) voltage, thereby stabilizing the bit line voltage against temperature and process variations while maintaining circuit functionality.
2Reliability
If the voltage regulator is made more complex to reduce dependency on process parameters, then voltage stability improves, but device complexity increases
Solution Approach 1:
The patent introduces a bandgap reference circuit as an intermediary component that provides a stable reference voltage to the feedback mechanism. This intermediary element decouples the bit line voltage regulation from direct dependence on transistor characteristics and process variations, achieving improved voltage stability without proportionally increasing overall circuit complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution provides a stable bit line voltage with minimal dependency on operating voltage and temperature fluctuations, ensuring accurate current measurement and improved read rate reliability.
Implementation Method 1
a voltage regulator comprising an inverter, a feedback transistor and a band gap reference voltage source, wherein the band gap reference voltage source predetermines the voltage to which the inverter input is regulated
Data Source
AI summary
A voltage regulator for a bit line of a semiconductor memory cell is disclosed. In one embodiment, the voltage regulator includes an inverter, a feedback transistor, and a band gap reference voltage source. The inverter includes an inverter input connected to the bit line, and an inverter output. The feedback transistor includes a feedback source connected to the inverter input, and a feedback gate connected to the inverter output. The band gap reference voltage source predetermines the voltage to which the inverter input is regulated.