Bandgap Voltage Stabilization via Polysilicon Resistor Layout

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Solution Overview

Problem

Current bandgap reference circuits fail to achieve the target voltage of 1.2 V, with existing verification methods like resistor matching, I/O device matching, and bipolar junction transistor matching only reaching 1.11 V, indicating a need for a new approach to stabilize voltage.

Innovation Solution

The method involves creating multiple layout patterns with reduced polysilicon resistor widths, specifically shrinking the first layout pattern by 2% to 16% to generate corresponding voltage patterns, and matching these patterns with a target voltage to achieve stable output.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If traditional verification methods (resistor matching, I/O device matching, BJT matching) are used, then the bandgap reference circuit can be manufactured with standard processes, but the output voltage only reaches 1.11 V instead of the target 1.2 V

Engineering Contradiction:
Improvevoltage output precisionVSAvoidmanufacturing process complexity
Core Design Contradiction:
Manufacturing precisionVSEase of manufacture

Solution Approach 1:

The patent applies parameter changes by adjusting the critical dimension (width) of polysilicon resistor patterns in the layout. By reducing the width parameter of the first layout pattern to generate a second layout pattern, the resistance value changes, thereby adjusting the bandgap voltage from 1.11 V to the target 1.2 V. This direct parameter modification resolves the voltage discrepancy without requiring complex new verification methods.

Inventive Principle:
Principle #35Parameter changes

2Manufacturing precision

If the polysilicon resistor width is reduced to increase voltage, then the target voltage of 1.2 V can be achieved, but the manufacturing precision requirements increase

Engineering Contradiction:
Improvevoltage output precisionVSAvoidcritical dimension measurement precision
Core Design Contradiction:
Manufacturing precisionVSMeasurement precision

Solution Approach 1:

The patent applies preliminary action by performing layout pattern optimization before the actual manufacturing process. The second layout pattern with adjusted critical dimension is prepared and verified in advance through simulation and analysis, ensuring that the voltage target of 1.2 V can be achieved. This preliminary preparation allows for better control of measurement precision during fabrication.

Inventive Principle:
Principle #10Preliminary action

Data Source

PatentUS10909299B1Method for stabilizing bandgap voltage
Publication Date: 2021.02.02 UNITED MICROELECTRONICS CORP
  • US10909299B1 patent drawing
  • US10909299B1 patent drawing

AI summary

A method for stabilizing bandgap voltage includes the steps of: providing a first layout pattern designated with a first voltage; reducing a critical dimension of the first layout pattern for generating a second layout pattern corresponding to a second voltage; matching the second voltage with a target voltage; and then outputting the second layout pattern to a mask. Preferably, the first layout pattern and the second layout pattern include polysilicon resistor patterns.