Bank Column Control Circuit for Stable High-Speed Memory Operation
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Semiconductor devices face challenges in stabilizing bank active signals during high-speed operations, leading to instability in column operations across multiple banks due to insufficient pulse width and cycle adjustments in column control signals.
Innovation Solution
The semiconductor device incorporates an internal column control signal generation circuit that adjusts pulse width and cycle of column control signals, generating internal column control signals with increased pulse width and cycle, which are used to latch bank active signals effectively across multiple banks, ensuring stable column operations.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If the semiconductor device operates at high speed, then productivity is improved, but the pulse width of column control signals becomes insufficient causing instability in bank active signals
Solution Approach 1:
The pulse width adjustment circuit dynamically adjusts the pulse width of column control signals based on operational requirements. The circuit extends the pulse width when needed to ensure stable latching of bank active signals during high-speed operations, making the signal duration adaptable rather than fixed.
Solution Approach 2:
The invention changes the temporal parameter (pulse width) of the column control signal through dedicated adjustment circuits. By modifying this parameter, the system ensures that bank active signals are properly latched even when operating at high speeds where standard pulse widths would be insufficient.
2Productivity
If the semiconductor device operates at high speed, then productivity is improved, but the cycle of column control signals becomes insufficient causing instability in column operations
Solution Approach 1:
The cycle adjustment circuit dynamically modifies the cycle period of column control signals to match operational demands. During high-speed operations, the circuit adjusts the timing characteristics to ensure adequate intervals between successive column operations, preventing signal instability while maintaining high throughput.
Solution Approach 2:
The invention modifies the temporal parameter (cycle period) of column control signals through dedicated adjustment circuits. By changing this parameter, the system ensures stable column operations across multiple banks even when operating at high speeds where standard cycle periods would be insufficient.
3Reliability
If the pulse width of column control signals is increased to stabilize bank active signals, then reliability is improved, but the operation speed may be reduced
Solution Approach 1:
Rather than using a fixed increased pulse width that would slow down all operations, the pulse width adjustment circuit dynamically sets the pulse width based on actual operational needs. This allows the system to use extended pulse widths only when required for stable latching, while maintaining faster operation speeds during routine operations.
Solution Approach 2:
The system changes the pulse width parameter adaptively rather than permanently. The adjustment circuits modify this parameter only when high-speed operation causes insufficient latching, thereby improving reliability without permanently sacrificing operation speed.
4Reliability
If the cycle of column control signals is increased to stabilize column operations, then reliability is improved, but the operation speed may be reduced
Solution Approach 1:
The cycle adjustment circuit dynamically modifies the cycle period based on operational requirements rather than using a fixed extended cycle. This allows the system to maintain high operation speeds during normal operations while extending the cycle period only when needed to ensure stable column operations across multiple banks.
Solution Approach 2:
The system adaptively changes the cycle period parameter through adjustment circuits, modifying this temporal characteristic only when high-speed operation causes instability in column operations. This ensures reliability improvement without permanent reduction in operation speed.
Data Source
AI summary
A semiconductor device includes an internal column control signal generation circuit, a bank address transfer circuit, and a first bank control circuit. The internal column control signal generation circuit generates a column control signal to output an internal column control signal. The bank address transfer circuit receives a bank address to generate an inverted bank address and outputs the bank address and the inverted bank address. The first bank control circuit generates a first bank active signal based on at least one of the bank address and the inverted bank address and latches the first bank active signal based on the internal column control signal to generate a first bank column control signal.