Bottom Anti-Reflective Layer Treatment for Semiconductor Blister Prevention
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Solution Overview
Problem
As semiconductor devices undergo miniaturization, the reduction in feature size leads to issues such as blister formation during processing, which can result in defects like bubble defects and threshold voltage breakdown, affecting the performance and reliability of the devices.
Innovation Solution
A method is introduced that involves the use of a bottom anti-reflective layer with reduced diffusibility, treated with a chemical or physical process to prevent etchant penetration and subsequent reactions with underlying layers, thereby preventing blister formation. This is achieved by applying a treatment chemical that fills pores in the bottom anti-reflective layer or reacting it to form a protective layer, which inhibits the movement of etching chemicals.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If the minimum feature size is reduced to improve integration density, then more components can be integrated into a given area, but blister formation and defects occur during processing
Solution Approach 1:
The patent applies preliminary action by treating the bottom anti-reflective layer with a chemical or physical process before the etching step. This treatment reduces the diffusibility of the layer, preventing etchant penetration and subsequent blister formation during later processing steps. The preventive treatment is performed in advance to eliminate the defect mechanism before it can occur.
Solution Approach 2:
The patent introduces an intermediary treatment process that modifies the bottom anti-reflective layer properties. This intermediary step acts as a mediator between the depositon process and the etching process, creating a protective state that prevents harmful chemical interactions while allowing the etching to proceed normally on intended targets.
2Ease of manufacture
If a standard bottom anti-reflective layer is used to prevent light reflection, then lithography patterning can be performed, but etchant penetrates through the layer causing blister formation
Solution Approach 1:
The patent changes the physical-chemical parameters of the bottom anti-reflective layer by reducing its diffusibility through chemical or physical treatment. This parameter change maintains the layer's optical properties for lithography while modifying its chemical resistance to prevent etchant penetration. The treatment alters the layer's structure to create a protective state without compromising its primary function.
3Manufacturing precision
If etching chemicals are applied to remove material, then circuit components are formed, but unwanted chemical reactions occur with underlying layers causing defects
Solution Approach 1:
The patent applies preliminary anti-action by pre-treating the bottom anti-reflective layer to create resistance against etchant penetration. This counter-action is established before the etching process begins, preventing the harmful chemical reactions that would otherwise occur between the etchant and underlying layers. The protective state is created in advance to neutralize the potential harm.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The approach significantly reduces the occurrence of defects like blisters, extending the clean time window and enabling the fabrication of smaller process nodes and tighter fin-to-fin pitches by preventing unwanted chemical reactions, thus enhancing the reliability and performance of semiconductor devices.
Implementation Method 1
reducing the first diffusibility to a second diffusibility with respect to the first chemical
Implementation Method 2
reacting it to form a protective layer
Implementation Method 3
fills pores in the bottom anti-reflective layer
Data Source
AI summary
Semiconductor devices and methods which utilize a treatment process of a bottom anti-reflective layer are provided. The treatment process may be a physical treatment process in which material is added in order to fill holes and pores within the material of the bottom anti-reflective layer or else the treatment process may be a chemical treatment process in which a chemical reaction is used to form a protective layer. By treating the bottom anti-reflective layer the diffusion of subsequently applied chemicals is reduced or eliminated, thereby helping to prevent defects that arise from such diffusion.