Barrier Layer Electrode Process for Low Resistance Connections
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Solution Overview
Problem
The existing methods for forming electrodes in electronic devices face challenges in achieving low resistance and high physical strength connections between substrates and packages, often compromised by insulating materials and requiring high-temperature processes that are not practical in all equipment setups.
Innovation Solution
A process involving the formation of an adhesion layer, a barrier layer, and a conductive layer on the substrate's second surface, where the adhesion layer is deposited using chemical vapor deposition without breaking vacuum, and the barrier layer is formed using titanium to prevent diffusion and maintain connection strength, independent of mount process temperature.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If argon sputter etch is used to remove insulating material, then electrical resistance is reduced, but physical connection strength is compromised
Solution Approach 1:
The substrate surface is prepared through mechanical polishing and chemical cleaning before electrode deposition, creating a clean surface that enables both strong adhesion and low resistance without requiring aggressive sputter etching
Solution Approach 2:
The patent changes the surface preparation method from physical sputter etching to chemical-mechanical polishing and chemical cleaning, altering the approach from removing material aggressively to preparing the surface gently, thereby maintaining both electrical and mechanical properties
2Strength
If native oxide is formed to improve physical connection, then adhesion is improved, but electrical resistance increases
Solution Approach 1:
The substrate surface is cleaned and prepared before electrode deposition to ensure proper adhesion without forming thick native oxide layers that would increase electrical resistance
Solution Approach 2:
The patent controls the oxidation state of the substrate surface through chemical cleaning and timing of deposition, maintaining just enough oxide for adhesion while preventing excessive oxide formation that would harm electrical conductivity
3Strength
If high temperature baking is performed to improve connection, then adhesion is enhanced, but equipment complexity and cost increase
Solution Approach 1:
Adhesion is established through surface preparation and controlled deposition processes performed at lower temperatures, eliminating the need for subsequent high-temperature baking steps
Solution Approach 2:
The patent replaces thermal processing (high-temperature baking) with chemical-mechanical polishing and chemical cleaning processes, substituting a thermal field approach with chemical and mechanical approaches to achieve adhesion
4Reliability
If high temperature processes are used for electrode formation, then connection quality is improved, but adaptability to equipment is reduced
Solution Approach 1:
The patent changes the temperature parameter from high (380°C or greater) to low (below 380°C), enabling the process to be performed in standard deposition equipment without specialized heat control, thereby improving equipment compatibility while maintaining connection quality
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach provides an improved physical and electrical connection with reduced resistance, independent of the mount process temperature, and can be performed in a wider variety of equipment setups, reducing equipment replacement costs and process complexity.
Implementation Method 1
the adhesion layer is deposited using chemical vapor deposition without breaking vacuum
Implementation Method 2
the barrier layer is formed using titanium to prevent diffusion and maintain connection strength
Data Source
AI summary
An electronic device can include a substrate (12) having a primary surface (14), a second surface (16, 22) opposite the primary surface (14), and an electrode (50). In one embodiment, the electrode (50) can lie adjacent to the second surface (22) and include, a barrier layer (54) lying between a conductive layer (56) and a metal-containing layer (52), wherein the metal-containing layer (52) includes a first metallic element and not a second metal element, and the barrier layer (54) includes the second metal element and not the first metallic element. In another embodiment, an adhesion layer (52) and a conductive layer (56) can each include a metallic element, and lie immediately adjacent to a barrier layer (54). In still another embodiment, a process for forming an electronic device can include removing a portion of the substrate (12) opposite a primary surface (14).