Barrier Layer Formation for EUV Lithography Pattern Quality
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Solution Overview
Problem
Existing methods struggle to form fine features with small dimensions on substrates while maintaining low line width roughness, pattern quality, and compatibility with EUV lithography processing.
Innovation Solution
A method involving the formation of a barrier layer on a substrate's surface layer, followed by depositing a metal-containing layer, which includes exposing the surface layer to a nitrogen-containing plasma and using cyclical deposition processes to enhance the substrate's properties, such as forming a plasma-modified surface layer and interlayer.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If feature dimensions are reduced to increase device density, then device density is improved, but pattern quality and etch selectivity deteriorate
Solution Approach 1:
The barrier layer is deposited in advance to establish a protective interface that maintains etch selectivity even when feature dimensions are reduced. This preliminary action ensures that the carbon-containing surface layer remains intact during etching of smaller features, preserving pattern quality and fidelity as device density increases
Solution Approach 2:
The barrier layer provides localized protection at the substrate surface where etching occurs. This localized quality enhancement ensures that etch selectivity is maintained specifically at the interface region, allowing for high-precision patterning of small features without compromising overall pattern quality
2Productivity
If the carbon-containing surface layer is directly exposed to etch chemistry, then etching efficiency is improved, but intermixing increases and surface layer stability deteriorates
Solution Approach 1:
The barrier layer serves as an intermediary that enables efficient etching to proceed while preventing direct contact between the etch chemistry and the carbon-containing surface layer. This intermediary layer maintains surface layer stability and prevents intermixing, allowing high etching efficiency without compromising surface integrity
Solution Approach 2:
The system is segmented into distinct layers: the carbon-containing surface layer, the barrier layer, and the etch chemistry. This segmentation allows each component to perform its function independently—the surface layer provides the substrate, the barrier layer enables selective etching while preventing intermixing, and the etch chemistry removes material efficiently—thereby maintaining surface layer stability during efficient etching
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Improves etch selectivity, reduces line width roughness, enhances pattern quality, and ensures stability during EUV lithography processing by protecting the carbon-containing surface layer and minimizing intermixing.
Implementation Method 1
exposing the surface layer to a nitrogen-containing plasma
Implementation Method 2
depositing a metal-containing layer on the substrate... depositing a metal-containing layer on the substrate comprises a cyclical deposition process
Data Source
AI summary
Methods and related systems for lithographically defining patterns on a substrate are disclosed. An exemplary method includes forming a structure. The method includes providing a substrate to a reaction chamber. The substrate comprises a semiconductor and a surface layer. The surface layer comprises amorphous carbon. The method further comprises forming a barrier layer on the surface layer and depositing a metal-containing layer on the substrate. The metal-containing layer comprises oxygen and a metal.