Barrier Layer Formation on Low-k Insulator Trenches
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Solution Overview
Problem
The semiconductor industry faces challenges in manufacturing with low dielectric constant insulating materials, as copper tends to diffuse into these materials, requiring barrier layers in conductive line and via structures, which can be damaged during processing, affecting integration density and device performance.
Innovation Solution
A surface modification process converts hydrophilic damaged regions on the sidewalls of trenches into hydrophobic regions, allowing for the selective formation of a barrier layer using hydrocarbon-based materials like graphite or graphene, preventing copper diffusion and improving adhesion for subsequent seed layers without damaging conductive surfaces.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If barrier layers are added to prevent copper diffusion into low k insulating materials, then copper diffusion is prevented, but device complexity and manufacturing process complexity increase
Solution Approach 1:
The patent applies preliminary action by forming a surface modification layer on the low k insulating material before depositing the barrier layer. This pre-treatment step modifies the surface properties of the insulating material to improve adhesion for the subsequent barrier layer, ensuring better integration and reducing the need for additional complex process steps later in manufacturing.
Solution Approach 2:
The patent employs composite materials by creating a multi-layer structure consisting of the low k insulating material, the surface modification layer, and the barrier layer. Each layer serves a specific function: the low k material provides electrical insulation, the surface modification layer enhances adhesion, and the barrier layer prevents copper diffusion. This composite approach optimizes overall performance while managing complexity through functional specialization.
2Reliability
If barrier layers are deposited to prevent copper diffusion, then copper diffusion is prevented, but manufacturing time and process steps increase
Solution Approach 1:
The patent merges the surface modification step with the barrier layer deposition process. The surface modification layer is formed in-situ or integrated into the existing process flow, allowing the modification and barrier formation to occur as a combined sequence rather than separate, time-consuming steps. This reduces overall manufacturing time while maintaining the effectiveness of copper diffusion prevention.
3Reliability
If additional barrier films are added to ensure copper diffusion prevention, then copper diffusion prevention is improved, but adhesion problems and manufacturing complexity increase
Solution Approach 1:
The surface modification layer acts as an intermediary between the low k insulating material and the barrier layer. This intermediate layer improves adhesion by creating a transition zone with compatible surface properties, eliminating the need for additional adhesion-promoting layers or complex surface treatment processes. The intermediary layer simplifies manufacturing by ensuring reliable bonding between dissimilar materials.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively forms a conformal barrier layer on insulating material sidewalls, preventing copper diffusion, maintaining conductivity, and eliminating the need for additional barrier films, thus enhancing integration density and device reliability while simplifying the manufacturing process.
Implementation Method 1
A surface modification process converts hydrophilic damaged regions on the sidewalls of trenches into hydrophobic regions
Implementation Method 2
A surface modification process converts hydrophilic damaged regions on the sidewalls of trenches into hydrophobic regions
Implementation Method 3
copper tends to diffuse into some low k insulating materials, so that the use of barrier layers in the conductive line and via structures is required
Implementation Method 4
A surface modification process converts hydrophilic damaged regions on the sidewalls of trenches into hydrophobic regions, allowing for the selective formation of a barrier layer
Implementation Method 5
A surface modification process converts hydrophilic damaged regions on the sidewalls of trenches into hydrophobic regions, allowing for the selective formation of a barrier layer
Data Source
AI summary
A semiconductor device includes providing a workpiece including an insulating material layer disposed thereon. The insulating material layer includes a trench formed therein. A barrier layer on the sidewalls of the trench is formed using a surface modification process and a surface treatment process.