Barrier Layered MOSFET Channel Structure for Leakage Control
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Solution Overview
Problem
The challenge in semiconductor device design is to enhance integration density and functionality while managing the limitations of size reduction in Metal-Oxide Semiconductor Field-Effect Transistor (MOSFET) devices, particularly in preventing leakage current and impurity diffusion in three-dimensional channel structures.
Innovation Solution
A semiconductor device is designed with a barrier layer between the active region and semiconductor layers, incorporating a barrier impurity element like oxygen or carbon, which is epitaxially grown to prevent well impurity diffusion and reduce leakage current, and a gate structure that covers the semiconductor layers, forming a three-dimensional channel structure.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If the size of MOSFET devices is reduced to increase integration density, then integration density is improved, but leakage current and impurity diffusion increase
Solution Approach 1:
A barrier layer is introduced as an intermediary component between the active region and the semiconductor layer. This barrier layer, containing barrier impurity elements (oxygen or carbon), acts as a mediator to block impurity diffusion and reduce leakage current, thereby resolving the contradiction between high integration density and device reliability
2Productivity
If the size of MOSFET devices is reduced to increase integration density, then integration density is improved, but impurity diffusion increases
Solution Approach 1:
The barrier layer serves as a protective intermediary that prevents well impurity diffusion into the semiconductor layer. By placing this barrier layer at the critical interface, the patent effectively blocks impurity diffusion while maintaining the reduced device dimensions needed for high integration density
3Reliability
If a barrier layer is added to prevent leakage current and impurity diffusion, then reliability is improved, but device complexity increases
Solution Approach 1:
The barrier layer is applied locally at the critical interface between the active region and semiconductor layer, rather than throughout the entire device structure. This localized approach improves reliability by blocking impurity diffusion precisely where needed, while minimizing the overall structural complexity and maintaining fabrication simplicity
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The barrier layer effectively reduces leakage current and improves the operating characteristics of the semiconductor device by blocking impurity diffusion, thereby enhancing integration density and functionality.
Implementation Method 1
a barrier layer on the active region... the barrier layer is disposed between the gate structure and the active region... prevent well impurity diffusion
Implementation Method 2
forming an epitaxially grown first layer epitaxially grown from the well region... by performing a first epitaxial growth process including in-situ doping
Data Source
AI summary
A semiconductor device includes; an active region; an isolation region defining the active region; a barrier layer on the active region; an upper semiconductor layer on the barrier layer; and a gate structure covering an upper surface, a lower surface, and side surfaces of the upper semiconductor layer in a first direction. The first direction is a direction parallel to an upper surface of the active region, and the barrier layer is disposed between the gate structure and the active region.