Semiconductor Barrier Layer Nitridation for Thin Fluorine Blocking
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Solution Overview
Problem
In semiconductor manufacturing, existing barrier layer technologies face challenges in reducing thickness while maintaining resistivity and preventing fluorine impurity leakage, especially as the number of metal lines increases in 3D memory structures.
Innovation Solution
A method involving pulse-type nitridation operations using high ammonia pressure and short treatment times, combined with purge operations, is employed during atomic layer deposition to form a barrier layer, effectively removing Cl atoms and improving barrier properties by repeating ammonia treatments and purges.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Speed
If the barrier layer thickness is reduced to improve device performance, then the signal propagation delay is improved, but the ability to prevent fluorine impurity leakage deteriorates
Solution Approach 1:
The patent changes the chemical composition parameters of the barrier layer by incorporating nitrogen through nitridation treatment, transforming the barrier material from conventional metals to metal nitrides. This parameter change enables the barrier layer to maintain effective leakage prevention with reduced thickness, as metal nitrides provide superior barrier properties against fluorine diffusion compared to traditional metal materials.
Solution Approach 2:
The patent creates a composite barrier structure by combining metal precursor layers with nitrogen-containing compounds through nitridation. The resulting metal nitride composite material exhibits enhanced barrier properties that allow thickness reduction while maintaining or improving leakage prevention capabilities against fluorine impurities.
2Ease of manufacture
If conventional barrier layer materials and methods are used, then the manufacturing process is simple, but the barrier layer cannot effectively prevent fluorine impurity leakage in advanced 3D memory structures
Solution Approach 1:
The patent modifies the deposition process parameters by implementing pulse-type nitridation operations with high ammonia pressure and short treatment times. This parameter change transforms the conventional single-step deposition into a multi-stage process that incorporates in-situ nitridation, enabling the formation of metal nitride barrier layers with superior leakage prevention properties while maintaining process integration efficiency.
Solution Approach 2:
The patent achieves continuous useful action by integrating the nitridation treatment directly into the deposition process. The pulse-type nitridation operations are performed immediately after precursor deposition without breaking vacuum, ensuring continuous transformation of the barrier layer material properties and eliminating the need for separate nitridation processing steps.
3Quantity of substance
If multiple metal lines are stacked in 3D memory structures, then the memory capacity is increased, but the difficulty of maintaining barrier layer performance increases
Solution Approach 1:
The patent employs periodic pulse-type nitridation operations during the deposition process for each metal line. This periodic treatment ensures that each barrier layer in the multi-layer 3D memory structure receives consistent nitrogen incorporation, maintaining uniform barrier properties across all stacked metal lines and ensuring performance consistency throughout the three-dimensional structure.
Solution Approach 2:
The patent performs preliminary nitridation treatment during the deposition process itself, before the metal lines are fully formed and stacked. This preliminary action ensures that each barrier layer is pre-treated with nitrogen to establish optimal barrier properties before subsequent processing steps, maintaining performance consistency across multiple stacked structures.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach balances thickness reduction and leakage prevention, enhancing the continuity and barrier properties of the barrier layer, thereby ensuring reliable performance in 3D memory devices.
Implementation Method 1
The dielectric layer is exposed to a precursor having a first metal
Implementation Method 2
a pulse-type nitridation operation is performed. The pulse-type nitridation operation includes performing a first ammonia treatment
Implementation Method 3
A first purge operation is performed, a second ammonia treatment is performed after the first purge operation, and a second purge operation is performed after the second ammonia treatment
Data Source
AI summary
A method for forming a barrier layer in a semiconductor structure is disclosed. A substrate having a dielectric layer is provided. The dielectric layer is exposed to a precursor having a first metal, and a first ammonia treatment is performed. A first purge operation is performed, a second ammonia treatment is performed after the first purge operation, and a second purge operation is performed after the second ammonia treatment to form the barrier layer on the dielectric layer.