Barrier Layer Segmentation in Semiconductor Devices
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Solution Overview
Problem
As the demand for high-performance, high-speed, and multifunctional semiconductor devices increases, the challenge is to maintain the integration and reliability of semiconductor devices with fine patterns, particularly in preventing impurity diffusion and ensuring electrical characteristics during manufacturing.
Innovation Solution
The semiconductor device incorporates a barrier layer structure with a first barrier layer spaced apart from the active region's upper surface and second barrier layers positioned below the channel layers, preventing impurity diffusion and adjusting the diffused amount of impurities, while also considering lattice constants to maintain crystallinity and electrical characteristics.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a single barrier layer is used to prevent impurity diffusion, then the structure is simple, but the impurity diffusion control is insufficient
Solution Approach 1:
The barrier layer is divided into multiple segments: a first barrier layer spaced apart from the active region upper surface and second barrier layers positioned below the channel layers. This segmentation allows each barrier layer segment to perform specific functions - the first barrier layer prevents impurity diffusion from the active region while the second barrier layers prevent impurity diffusion from deeper regions, achieving comprehensive impurity control without requiring a single thick barrier layer.
Solution Approach 2:
Different barrier layers are positioned at different depths and locations within the device structure. The first barrier layer is positioned in the active region spaced from the upper surface, while second barrier layers are positioned below specific channel layers. This local positioning optimizes impurity diffusion prevention at each critical interface, providing tailored protection where needed most.
2Reliability
If barrier layers are positioned close to the active region to block impurities, then impurity diffusion is prevented, but lattice mismatch and crystallinity degradation occur
Solution Approach 1:
The first barrier layer is positioned spaced apart from the active region upper surface rather than directly adjacent to it. This preliminary positioning creates a buffer zone that prevents direct contact between the barrier layer and the active region, thereby preventing impurity diffusion while avoiding the lattice mismatch and crystallinity degradation that would occur with direct contact.
Solution Approach 2:
The barrier layers act as intermediary structures between the active region and the channel layers. By positioning the first barrier layer spaced from the active region upper surface and the second barrier layers below the channel layers, the invention creates intermediate zones that mediate the interaction between different regions, preventing direct impurity transfer while maintaining structural integrity.
3Reliability
If multiple barrier layers are added to improve impurity control, then reliability increases, but manufacturing complexity increases
Solution Approach 1:
The barrier layers are arranged in the vertical dimension at different depths rather than expanding the barrier structure laterally. The first barrier layer is positioned at a higher vertical level spaced from the active region upper surface, while second barrier layers are positioned at lower vertical levels below the channel layers. This vertical arrangement achieves comprehensive impurity control without increasing lateral device footprint, simplifying integration into existing manufacturing processes.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration effectively blocks impurity diffusion, enhances the reliability of semiconductor devices, and ensures improved electrical characteristics by maintaining the integrity of the channel structures and gate structures, thereby supporting the high integration and performance requirements of advanced semiconductor devices.
Implementation Method 1
a barrier layer including a first barrier layer spaced apart from an upper surface of the active region and being disposed in the active region, and second barrier layers respectively disposed below the plurality of channel layers
Data Source
AI summary
A semiconductor device includes an active region extending on a substrate in a first direction and including an impurity region, a plurality of channel layers vertically spaced apart from each other on the active region, a gate structure extending on the substrate in a second direction to intersect the active region and the plurality of channel layers, and surrounding the plurality of channel layers, a source/drain region disposed on the active region on at least one side of the gate structure and in contact with the plurality of channel layers, a barrier layer including a first barrier layer spaced apart from an upper surface of the active region and being disposed in the active region, and second barrier layers respectively disposed below the plurality of channel layers, and a contact plug connected to the source/drain region.