Barrier Layer for Silicon Oxide Parasitic Oxidation
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Solution Overview
Problem
Current methods for controlling the oxidation of silicon layers in electronic device manufacturing often result in defects and thermal stress issues due to the oxidation of underlying silicon during the deposition of silicon oxide layers.
Innovation Solution
A method involving the formation of a high-quality barrier layer using rapid thermal processing, decoupled plasma oxidation, or decoupled plasma nitridation, followed by atomic layer deposition of a silicon oxide or nitride layer, which minimizes parasitic oxidation and improves electrical properties by maintaining a total thickness of less than or equal to 30 Å.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a silicon oxide layer is deposited on a silicon layer to prevent oxidation, then oxidation protection is improved, but the underlying silicon layer is oxidized during the process creating interface defects
Solution Approach 1:
A barrier layer is formed on the silicon layer before depositing the silicon oxide layer. This preliminary barrier layer prevents parasitic oxidation of the silicon layer during the silicon oxide deposition process, eliminating interface defects while maintaining oxidation protection.
Solution Approach 2:
The barrier layer acts as an intermediary between the silicon layer and the silicon oxide layer. It mediates the interaction by preventing direct oxidation of the silicon layer during deposition, thus protecting the interface quality while still allowing the silicon oxide layer to provide oxidation protection.
2Manufacturing precision
If a barrier layer is formed to prevent oxidation, then interface quality is improved, but process complexity increases
Solution Approach 1:
The barrier layer can be formed by modifying existing process parameters (temperature, gas flow, timing) of conventional rapid thermal annealing or plasma processes, rather than introducing entirely new process equipment or methodologies. This maintains relatively simple process integration while achieving the desired interface quality improvement.
3Manufacturing precision
If thinner films are used to meet smaller feature size requirements, then coverage on high aspect ratio structures is improved, but film quality and oxidation resistance deteriorate
Solution Approach 1:
The structure uses a composite of two thin layers (barrier layer + silicon oxide layer) with total thickness ≤30 Å. The barrier layer provides oxidation protection while the silicon oxide layer provides dielectric quality and coverage, achieving both thin film requirements and reliability needs through material composition rather than increasing single layer thickness.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach effectively reduces defects and enhances the quality of silicon layers by minimizing oxidation and thermal stress, leading to improved electrical properties and better coverage on high aspect ratio structures.
Implementation Method 1
the barrier layer comprising one or more of silicon oxide or silicon nitride and being formed by one or more of rapid thermal processing (RTP)
Implementation Method 2
decoupled plasma oxidation (DPO)
Implementation Method 3
decoupled plasma nitridation (DPN)
Implementation Method 4
depositing a second thickness of one or more of a silicon oxide layer or silicon nitride layer on the high quality barrier layer by atomic layer deposition (ALD)
Data Source
AI summary
A method of forming an electronic device is disclosed. The method comprises forming a barrier layer on a silicon layer, and depositing a silicon oxide layer on the barrier layer. The formation of the barrier layer on the silicon layer minimizes parasitic oxidation of the underlying silicon layer and minimizes defects in the silicon layer.