Semiconductor Barrier Layer Structure for Contact-Via Isolation
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Solution Overview
Problem
The scaling down of semiconductor devices has led to challenges in manufacturing highly reliable MOSFETs, finFETs, and GAA FETs due to inadequate electrical isolation between contact and via structures, resulting in current leakage and performance degradation.
Innovation Solution
Incorporating a barrier layer with a high dielectric constant, such as an insulating nitride layer, between adjacent contact and via structures to prevent conductive material leakage, with specific configurations to ensure effective electrical isolation and minimize electrical breakdown.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If the dimensions of semiconductor devices are scaled down to increase storage capacity and processing speed, then device performance and integration density are improved, but electrical isolation between contact and via structures deteriorates leading to conductive material leakage
Solution Approach 1:
A barrier layer is introduced as an intermediary structure between contact structures and via structures. This barrier layer prevents direct interaction between conductive materials from different structures, thereby eliminating leakage paths while allowing both structures to maintain their electrical functionality. The barrier layer acts as a mediator that resolves the isolation problem without requiring further scaling of the overall device dimensions.
Solution Approach 2:
The barrier layer is formed using composite material structures, specifically combining a first barrier material and a second barrier material with different properties. The first barrier material provides primary electrical isolation, while the second barrier material enhances adhesion and provides additional isolation. This composite approach allows optimization of both electrical performance and mechanical reliability in the scaled-down device structure.
2Area of moving object
If the electrical isolation region size is reduced due to device scaling, then device density is improved, but conductive material leakage increases
Solution Approach 1:
The barrier layer serves as an intermediary that blocks the harmful leakage current between via structures and contact structures. By inserting this intermediate layer, the design achieves adequate electrical isolation even with minimized isolation region area, as the barrier layer provides the necessary blocking function within the constrained space.
Solution Approach 2:
The barrier layer is strategically positioned only where needed - specifically between via structures and contact structures - rather than requiring large-area isolation regions. This localized approach provides targeted electrical isolation at the critical interfaces where leakage occurs, maintaining device density while preventing harmful effects.
3Reliability
If barrier layers are added between contact and via structures to prevent leakage, then electrical isolation is improved, but device complexity increases
Solution Approach 1:
The barrier layer is designed with specific parameter ranges - thickness between 5-20 nm and dielectric constant between 3-10 - that optimize its effectiveness while minimizing its impact on device complexity. By controlling these parameters, the barrier layer provides adequate electrical isolation without requiring excessive material or occupying unnecessary space, thus limiting the increase in device complexity.
Solution Approach 2:
The use of composite barrier layer materials with different properties allows each layer to be optimized for its specific function. The first barrier material focuses on electrical isolation while the second barrier material addresses adhesion and mechanical stability. This division of functions within the composite structure achieves reliable electrical isolation without requiring a single complex multi-functional material.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The barrier layer effectively prevents current leakage between adjacent via structures, enhancing the reliability and performance of semiconductor devices by maintaining electrical isolation and reducing the probability of electrical breakdown.
Implementation Method 1
Incorporation of barrier layers with high dielectric constant materials between adjacent contact and via structures to prevent current leakage
Data Source
AI summary
A semiconductor device and a method of fabricating the semiconductor device are disclosed. The method includes forming a fin base on a substrate, epitaxially growing a S/D region on the fin base, depositing a dielectric layer on the S/D region, forming a contact structure on the S/D region through the dielectric layer, removing a portion of the dielectric layer to expose sidewalls of the contact structure, forming a barrier layer on the dielectric layer and to cover the exposed sidewalls of the contact structure, and forming a via structure on the contact structure through the barrier layer. The formation of the barrier layer includes depositing an insulating layer with a dielectric constant and a material density higher than a dielectric constant and a material density of the dielectric layer.