Barrier Metal Layer Prevents Copper Diffusion in Semiconductor Through Holes
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
In the manufacturing of semiconductor devices with penetrating electrodes, the diffusion of copper from these electrodes into etchant solutions during the wet process contaminates the Zener diode, leading to deterioration of device characteristics and reduced yield.
Innovation Solution
A method involving the formation of a first barrier metal pattern layer that covers the penetrating electrodes, preventing copper diffusion during the wet process, and allowing for the removal of natural oxide films on the element connection portions, enabling the formation of wiring layers with low contact resistance and improved yield.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If the natural oxide film is removed by wet process after forming penetrating electrodes, then the contact resistance is reduced, but copper diffuses from the penetrating electrodes to the etchant solution contaminating the Zener diode
Solution Approach 1:
A barrier metal layer is introduced as an intermediary between the copper penetrating electrode and the Zener diode. This barrier layer prevents copper diffusion into the etchant solution during the wet cleaning process while still allowing the natural oxide film to be removed from the Zener diode surface, thus eliminating copper contamination without compromising contact resistance
Solution Approach 2:
The barrier metal layer is formed on the penetrating electrode surface before the wet cleaning process. This preliminary protective action prevents copper diffusion into the etchant solution before contamination can occur, allowing subsequent oxide removal without harmful side effects
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method effectively prevents copper contamination of the semiconductor elements, ensuring desired device characteristics and enhancing the manufacturing yield by isolating the penetrating electrodes with a barrier metal layer and directly connecting the element to the wiring layer without intervention.
Implementation Method 1
forming a first barrier metal pattern layer covering the penetrating electrode, on both surface sides of the semiconductor substrate respectively
Implementation Method 2
removing a natural oxide film on the connection portion of the element in the contact hole
Data Source
AI summary
A method of manufacturing a semiconductor device, comprising the steps of preparing a structure including a semiconductor substrate, an element formed therein, a through hole formed to penetrate the semiconductor substrate, and an insulating layer formed on both surface sides of the semiconductor substrate and an inner surface of the through hole, and covering the element, forming a penetrating electrode in the through hole, forming a first barrier metal pattern layer covering the penetrating electrode, forming a contact hole reaching a connection portion of the element in the insulating layer, removing a natural oxide film on the connection portion of the element in the contact hole, and forming a wiring layer connected to the first barrier metal pattern layer and connected to the element through the contact hole.