BAs Source/Drain Structure for Heat Dissipation in Nanosheet FETs
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
The challenge of thermal management and heat dissipation in integrated circuits (ICs) has become critical due to increased power density and complexity, particularly in multi-gate transistors like FinFETs and nanosheet transistors, where silicon-based materials exhibit poor thermal conductivity and mobility issues.
Innovation Solution
Employing boron arsenide (BAs) with a thermal conductivity greater than 1000 W/mK as the material for source/drain regions and a high thermal conductivity material as a heat spreader to efficiently dissipate heat in nanostructure FETs, enhancing both heat dissipation and carrier mobility.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Temperature
If silicon-based materials are used in multi-gate transistors, then device complexity and functional density are reduced, but thermal conductivity is poor leading to overheating issues
Solution Approach 1:
The patent changes the material parameter from conventional silicon-based materials to boron arsenide (BAs) for source/drain regions. BAs exhibits fundamentally different thermal properties with thermal conductivity exceeding 1000 W/mK, representing a parameter change that directly addresses the heat dissipation issue while maintaining device functionality
Solution Approach 2:
The patent employs composite material structures where boron arsenide is integrated with semiconductor channel layers to form source/drain regions. This composite approach combines the high thermal conductivity of BAs with the electronic properties of semiconductor materials, achieving both heat dissipation and electrical functionality
2Productivity
If geometry sizes are scaled down to increase functional density, then production efficiency is improved, but thermal management complexity increases
Solution Approach 1:
The patent applies local quality by implementing boron arsenide specifically in the source/drain regions where heat generation is most intense, rather than uniformly across the entire device. This localized application targets the thermal management problem at its source while maintaining simplicity in other device regions
3Speed
If conventional materials are used in source/drain regions, then manufacturing process is simple, but carrier mobility is limited affecting switching speed
Solution Approach 1:
The patent changes the material composition parameter to boron arsenide, which inherently provides superior carrier mobility compared to conventional silicon-based materials. This parameter change directly enhances electron and hole transport, enabling faster switching speeds while the deposition processes remain compatible with existing semiconductor manufacturing
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
BAs effectively addresses overheating issues, improving the yield and reliability of semiconductor devices by efficiently dissipating heat and increasing switching speed through enhanced electron and hole mobility.
Implementation Method 1
a material of the S/D regions includes a high thermal conductivity material with a single crystal structure... boron arsenide (BAs) with a thermal conductivity greater than 1000 W/mK... BAs effectively addresses overheating issues, improving the yield and reliability of semiconductor devices by efficiently dissipating heat
Implementation Method 2
Employing boron arsenide (BAs) with a thermal conductivity greater than 1000 W/mK as the material for source/drain regions and a high thermal conductivity material as a heat spreader to efficiently dissipate heat
Data Source
AI summary
Provided are a semiconductor structure including high kappa (high-K) material for source/drain (S/D) and/or thermal heat spreader and a method of forming the same. The semiconductor device includes a substrate, a plurality of channel layers stacked over the substrate, a gate structure wrapping the plurality of channel layers, and source/drain (S/D) regions disposed over the substrate at opposite sides of the gate structure and connecting the plurality of channel layers. A material of the S/D regions includes a high thermal conductivity material with a single crystal structure, such as boron arsenide (BAs) with a thermal conductivity greater than 1000 W/mK. In this case, the high thermal conductivity material can efficiently dissipate the heat generated by the semiconductor structure to enhance the yield and the reliability of the semiconductor structure.