Basic Resin Coat Layer for Chemically Amplified Resist Opening Shape
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Solution Overview
Problem
Chemically amplified negative type resist materials used in semiconductor manufacturing often result in T-top shaped openings during pattern formation, leading to defects and pattern cracking due to uneven acid generation during exposure, which is difficult to address with existing methods.
Innovation Solution
A laminate comprising a chemically amplified negative type resist layer and a basic resin coat layer containing 0.001 to 10% by weight of a basic compound with a molecular weight up to 10,000, which improves the shape of openings by ensuring uniform distribution of the basic compound on the surface.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a chemically amplified negative type resist material is used to obtain fine patterns, then the pattern resolution is improved, but the opening shape deteriorates to T-top shape due to uneven acid generation
Solution Approach 1:
A basic compound is introduced as an intermediary substance between the photoacid generator and the resist polymer. This basic compound acts as a buffer to neutralize excess acid at the light-exposed surface, preventing excessive crosslinking and the formation of T-top shaped openings. The basic compound is incorporated into the resist composition at a specific ratio (0.01 to 5 parts by weight per 1 part of photoacid generator) to achieve uniform acid distribution and maintain cylindrical opening shapes.
Solution Approach 2:
The invention changes the chemical composition parameters of the resist material by adding a basic compound with specific properties (molecular weight of 50 to 10,000, specific basicity). This parameter change modifies the acid-base balance in the resist system, controlling the crosslinking reaction uniformity throughout the film thickness and preventing surface-dominated crosslinking that causes T-top formation.
2Productivity
If the film thickness is increased to enhance substrate area coverage, then the productivity is improved, but the acid generation uniformity deteriorates leading to T-top shape
Solution Approach 1:
The basic compound serves as a depth-independent buffer that distributes uniformly throughout the resist film. Even in thick films, this intermediary substance ensures that acid generated at any depth is neutralized proportionally, maintaining composition stability and preventing surface concentration effects that would cause T-top formation regardless of film thickness.
Solution Approach 2:
By adjusting the basic compound concentration parameter within the optimal range (0.01 to 5 parts per 1 part photoacid generator), the invention achieves acid generation uniformity across varying film thicknesses. This parameter optimization ensures that the acid-base neutralization occurs uniformly throughout the entire film depth, enabling thick film deposition without T-top formation.
3Shape
If a basic compound is added to control opening shape, then the shape control is improved, but the manufacturing complexity increases
Solution Approach 1:
The invention simplifies the overall process by optimizing the basic compound concentration parameter to a specific range (0.01 to 5 parts per 1 part photoacid generator). Within this optimized parameter range, excellent shape control is achieved without requiring complex multi-component systems or additional processing steps. The basic compound itself is selected from commercially available substances with molecular weights of 50 to 10,000, further simplifying implementation.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The laminate enables the formation of patterns with excellent opening shapes and side wall angles of 60 to 90 degrees, enhancing the resolution and reliability of the chemically amplified negative type resist material in semiconductor manufacturing.
Implementation Method 1
there may be mentioned the formation of a pattern by crosslinking with an acid generated upon light exposure. Therefore, this problem can be solved if an appropriate amount of a basic component is present in the surface layer at the time of pattern formation.
Data Source
AI summary
To provide a laminate which enables pattern formation with excellent opening shape even in the case where a chemically amplified negative type resist material is used, and a pattern forming method in which the laminate is used.The laminate includes a chemically amplified negative type resist layer, and a basic resin coat layer thereon that contains 0.001 to 10% by weight of a basic compound having a molecular weight of up to 10,000.