Batch ALE Wafer Stacking for Uniform Multi-Wafer Etching
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Solution Overview
Problem
Existing etching technologies face challenges in efficiently processing multiple semiconductor wafers with atomic precision, particularly in complex and narrow 3D structures, leading to issues like structural defects and non-uniform etching.
Innovation Solution
A batch-type atomic layer etching (ALE) apparatus and method that allows simultaneous processing of multiple wafers using a vertical wafer stacking container, multiple nozzles, and a heater system, with specific gas injection and exhaust configurations, enabling precise and uniform etching across multiple wafers.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If conventional etching technology is used to process multiple wafers, then processing capacity is improved, but etching uniformity and precision deteriorate
Solution Approach 1:
The gas supply system is segmented into multiple nozzles positioned at different heights, with each nozzle serving a specific wafer or region. This segmentation allows independent gas distribution control for each wafer, ensuring uniform etching across multiple wafers while maintaining high processing capacity
Solution Approach 2:
Different regions of the process chamber receive tailored gas flows through strategically positioned nozzles. Each nozzle delivers gas locally to its corresponding wafer, creating optimal local conditions for etching uniformity while processing multiple wafers simultaneously
2Productivity
If processing speed is increased for multiple wafers, then productivity is improved, but thermal stress and structural defects increase
Solution Approach 1:
The heating system is divided into multiple heating zones corresponding to different wafer positions. Each zone can be independently controlled to maintain optimal temperature distribution, enabling faster processing while minimizing thermal stress and structural defects in each wafer
Solution Approach 2:
Temperature control is optimized locally for each wafer position through zone-specific heating. This allows the system to maintain high processing speed while preventing excessive thermal stress and structural defects by tailoring thermal conditions to each local region
3Productivity
If gas supply is increased to enhance etching efficiency, then processing speed is improved, but gas distribution uniformity deteriorates
Solution Approach 1:
The gas supply system is divided into multiple nozzles positioned at different heights and locations within the process chamber. Each nozzle delivers gas to a specific region, ensuring that high gas flow rates for efficiency do not compromise distribution uniformity across different wafer positions
Solution Approach 2:
Gas flow is optimized locally at each nozzle position to match the specific requirements of each wafer or region. This local optimization maintains high etching efficiency while ensuring uniform gas distribution across the entire batch of wafers
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The apparatus achieves uniform and efficient etching of multiple wafers with reduced thermal stress, improving processing speed and reliability while maintaining precise control over etching thickness.
Implementation Method 1
a heater that surrounds the inner tube and is configured to adjust a temperature in the inner tube
Implementation Method 2
a heater that surrounds the inner tube and is configured to adjust a temperature in the inner tube
Implementation Method 3
a plurality of nozzles arranged in a first outer portion in the inner tube in a horizontal direction, the plurality of nozzles extending in the vertical direction and configured to supply a gas to the plurality of wafers
Data Source
AI summary
A batch-type apparatus for atomic layer etching (ALE), which is capable of ALE-processing several wafers at the same time, and an ALE method and a semiconductor device manufacturing method based on the batch-type apparatus, are provided. The ALE method including: performing, by a batch-type apparatus for ALE, a fluorination process of an ALE process by injecting a first source gas; and performing, by the batch-type apparatus for ALE, a ligand exchange process of the ALE process by injecting a second source gas, wherein the batch-type apparatus for ALE includes a wafer stacking container that has therein a plurality of wafers that are arranged in a vertical direction, and the batch-type apparatus for ALE further includes one or more process chambers.