Batch Thermal Chamber Liner for Uniform Multi-Wafer Heating
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Conventional semiconductor fabrication processes face challenges in achieving uniform temperature distribution and controlled gas flow during batch multi-wafer processing, as epitaxial chambers process one wafer at a time, while furnaces fail to maintain quality due to non-uniform temperature distribution between wafers.
Innovation Solution
A multi-wafer batch processing system with a processing chamber and process kit that includes an inner and outer liner, shelves, and lamp modules to provide radiative heat, along with a lift-rotation mechanism and gas injection/exhaust assemblies to maintain uniform temperature and gas flow, using materials that cause black-body radiation for uniform heating.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If batch multi-wafer processing is implemented using conventional furnaces, then productivity is improved, but temperature distribution uniformity deteriorates
Solution Approach 1:
The processing chamber is segmented into multiple zones with independent heating and gas flow control. Each wafer shelf is positioned in a controlled environment with dedicated heating elements and gas distribution, allowing individual temperature and flow optimization while processing multiple wafers simultaneously.
Solution Approach 2:
Different regions of the processing chamber are provided with localized heating and gas flow characteristics. The system employs distributed heating elements and gas injection points that can be independently controlled to maintain optimal conditions in each local zone, ensuring uniform temperature distribution across all wafers despite batch processing.
2Manufacturing precision
If single-wafer processing is used in epitaxial chambers, then temperature distribution uniformity is improved, but productivity deteriorates
Solution Approach 1:
The system merges the advantages of single-wafer precision processing with batch processing capability. Multiple wafers are processed simultaneously on stacked shelves within a single chamber that maintains precise temperature and gas flow control, combining the throughput of batch processing with the uniformity of single-wafer processing.
Solution Approach 2:
The invention transitions from processing wafers in a single plane to processing them in multiple vertical layers. The stacked shelf configuration utilizes the vertical dimension to accommodate multiple wafers while maintaining controlled atmospheric conditions and uniform temperature distribution across all processing surfaces.
3Productivity
If gas flow is increased to improve processing speed, then productivity is improved, but temperature uniformity deteriorates due to convective effects
Solution Approach 1:
The system dynamically adjusts gas flow parameters and heating power to maintain optimal processing conditions. By controlling the velocity and distribution of gas flow, the system achieves sufficient material transport for high-speed processing while minimizing convective temperature variations through coordinated control of flow rate and heating zones.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The system ensures uniform temperature distribution and controlled gas flow over and between wafers, enhancing the quality and throughput of fabricated devices by maintaining consistent processing conditions.
Implementation Method 1
a plurality of upper lamp modules disposed on a first side of the quartz chamber and configured to provide radiative heat to the substrates, a plurality of lower lamp modules disposed on a second side of the quartz chamber
Implementation Method 2
The inner surfaces of the enclosure comprise material configured to cause black-body radiation within the enclosure
Data Source
AI summary
A batch processing chamber and a process kit for use therein are provided. The process kit includes an outer liner having an upper outer liner and a lower outer liner, an inner liner, and a top plate and a bottom plate attached to an inner surface of the inner liner. The top plate and the bottom plate form an enclosure together with the inner liner, and a cassette is disposed within the enclosure. The cassette including shelves configured to retain a plurality of substrates thereon. The inner liner has inlet openings disposed on an injection side of the inner liner and configured to be in fluid communication with a gas injection assembly of a processing chamber, and outlet openings disposed on an exhaust side of the inner liner and configured to be in fluid communication with a gas exhaust assembly of the processing chamber. The inner surfaces of the enclosure comprise material configured to cause black-body radiation within the enclosure.