Vertical Batch Epitaxy Chamber for Throughput and Gas Uniformity
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Solution Overview
Problem
Current semiconductor processing technologies face limitations in epitaxial deposition operations due to long and expensive processes, limited capacity and throughput, and challenges with temperature control, gas control, and substrate center-to-edge adjustability, leading to inefficiencies and increased equipment footprint.
Innovation Solution
A batch processing apparatus with a dual-body chamber design that includes shared gas and exhaust systems, allowing for simultaneous processing of multiple substrates with adjustable substrate spacing and enhanced heat and gas distribution, facilitated by a pedestal assembly and flow guide structure to improve epitaxial deposition efficiency.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If traditional single-substrate processing is used, then processing quality is maintained, but throughput is limited and equipment footprint is large
Solution Approach 1:
The processing chamber is divided into multiple levels (first level, second level, third level) that can simultaneously process multiple substrates. Each level has its own substrate support structure, allowing parallel processing operations to increase throughput while maintaining manageable system complexity through modular design
Solution Approach 2:
The patent transitions from processing substrates in a single plane to processing them across multiple vertical levels. The level spacing (25 mm or higher) and vertical arrangement of substrates enable simultaneous processing of multiple substrates in the vertical dimension, thereby increasing throughput without proportionally increasing horizontal equipment footprint
2Productivity
If multiple substrates are processed simultaneously, then throughput increases, but temperature control and gas distribution become more difficult
Solution Approach 1:
Each substrate level is equipped with dedicated heating elements and gas distribution systems. The first level has first heating elements and first gas distribution channels, while the second level has second heating elements and second gas distribution channels. This localized control ensures uniform temperature and gas distribution across multiple substrates simultaneously, maintaining processing quality while enabling parallel operations
Solution Approach 2:
The heating and gas distribution systems are segmented by level, with independent control for each level. This segmentation allows precise temperature control for each substrate position, ensuring that simultaneous processing of multiple substrates does not compromise temperature uniformity or gas distribution quality
3Manufacturing precision
If complex processing operations are implemented, then device performance improves, but control adjustability and ease of operation decrease
Solution Approach 1:
The patent incorporates adjustable level spacing mechanisms that allow the vertical distance between substrate levels to be modified. The level spacing can be adjusted to 25 mm or higher based on processing requirements. This dynamic adjustability enables operators to optimize processing conditions for different device performance requirements while maintaining ease of operation through straightforward mechanical adjustment
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution increases throughput, enhances growth rates, and reduces equipment costs and footprint by enabling efficient simultaneous processing of multiple substrates with improved temperature and gas control, thereby improving device performance and processing efficiency.
Implementation Method 1
one or more heat sources configured to generate heat
Implementation Method 2
a plurality of gas inject passages formed in the chamber body and in fluid communication with the processing volume
Implementation Method 3
The flow guide structure includes one or more first flow dividers that divide the processing volume into a plurality of flow levels
Data Source
AI summary
The present disclosure relates to batch processing apparatus, systems, and related methods and structures for epitaxial deposition operations. In one implementation, an apparatus for substrate processing includes a cassette. The cassette is at least partially supported by a pedestal assembly. The cassette includes a plurality of levels arranged vertically with respect to each other, each level of the plurality of levels including a support surface configured to support a substrate. A level spacing between adjacent levels of the plurality of levels is 25 mm or higher, and the level spacing is defined between the support surfaces of the adjacent levels.