Batch Substrate Gas Nozzle Sealing for Corrosive Deposition
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Existing batch type substrate processing apparatuses face challenges in efficiently performing deposition processes, particularly with corrosive gases, leading to productivity limitations.
Innovation Solution
A substrate processing apparatus with a boat design that stacks substrates vertically, featuring multiple gas supply units with distinct configurations for injecting corrosive and non-corrosive gases, including a fastening mechanism to prevent gas leakage, enhancing the efficiency of deposition processes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If a batch type substrate processing apparatus is used to increase productivity, then the manufacturing efficiency improves, but gas leakage occurs during deposition processes with corrosive gases
Solution Approach 1:
The gas nozzle is divided into multiple independent gas injection holes, allowing separate control and sealing for each gas flow path. This segmentation enables better management of corrosive gas delivery while maintaining overall system reliability and productivity.
Solution Approach 2:
A gasket is introduced as an intermediary sealing element between the gas nozzle and the processing chamber. This gasket acts as a mediator that prevents corrosive gas leakage while allowing the batch processing system to maintain high productivity through reliable gas containment.
2Adaptability or versatility
If multiple gas supply units are used for different gas types, then deposition process capability improves, but device complexity increases
Solution Approach 1:
The gas nozzle structure is designed with multiple injection holes that can handle different gas types (corrosive and non-corrosive) through a single unified component. This multi-functional design allows the system to perform various deposition processes without requiring separate nozzles for each gas type, thereby reducing overall device complexity while maintaining versatility.
Solution Approach 2:
Multiple gas supply functions are merged into a single gas nozzle structure with multiple injection holes. By combining the delivery of different gas types through one integrated component rather than separate units, the system achieves high deposition process capability while minimizing structural complexity.
3Productivity
If high flow rate gas injection is implemented for effective deposition, then process efficiency improves, but gas leakage risk increases
Solution Approach 1:
Different regions of the gas nozzle are designed with specific local qualities - the injection holes are positioned and sized to optimize gas flow rates for effective deposition, while the gasket sealing surfaces are specifically designed to prevent leakage. This local optimization allows high flow rate injection without proportionally increasing leakage risk.
Solution Approach 2:
The gasket serves as a mediator between the high-pressure gas injection system and the processing chamber environment. It provides a dedicated sealing interface that contains corrosive gases even during high flow rate injection, thereby enabling efficient deposition processes without proportionally increasing leakage risk.
Data Source
AI summary
A method of manufacturing a semiconductor device includes loading a plurality of substrates into a batch-type substrate processing apparatus, performing a semiconductor process on the plurality of substrates in the batch-type substrate processing apparatus, and unloading the plurality of substrates on which the semiconductor process has been performed from the batch-type substrate processing apparatus. The substrate processing apparatus includes: a processing chamber; a first gas supply unit and a second gas supply unit; and a boat. The first gas supply unit comprises a first gas inlet extending into the processing chamber from the outside of the processing chamber and having a shape including a horizontal portion and a vertical portion, a first gas nozzle on the first gas inlet, and a first adapter connecting the first gas inlet and the first gas nozzle. A diameter of the first gas inlet is greater than a diameter of a second gas inlet.