Batch Implanter Inclined Support for UTBOX Depth Uniformity
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Solution Overview
Problem
The use of batch implanters for Ultra-Thin Buried Oxide (UTBOX) semiconductor-on-insulator (SOI) structures results in degraded uniformity of implantation depth, leading to unsatisfactory thickness uniformity of the thin semiconductor layer, which is critical for the quality of the SOI structure.
Innovation Solution
A method involving each substrate in a batch implanter being positioned on a support with at least two separate inclinations relative to the orthogonal plane of the species' direction during implantation, allowing for uniform implantation depth, with optional angles between 2° and 15°, and a co-implantation of hydrogen and helium, to form a fragilization region and bound a thin semiconductor layer.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If a batch implanter is used for implanting ionic or atomic species into substrates with thin oxide layers (UTBOX), then the productivity is improved by processing multiple substrates simultaneously, but the manufacturing precision of implantation depth deteriorates due to degraded uniformity
Solution Approach 1:
The patent applies the dynamics principle by making the support movable to change its inclination angle during the implantation process. The support rotates about an axis to vary the inclination dynamically, allowing different portions of the substrate to be exposed to the species flux at different angles. This dynamic adjustment compensates for the non-uniformity inherent in batch implantation of UTBOX structures, thereby maintaining manufacturing precision while preserving high productivity.
Solution Approach 2:
The patent employs parameter changes by varying the inclination angle of the support during implantation. By changing the geometric parameter (inclination angle) of the substrate relative to the species flux direction, the patent optimizes the implantation depth uniformity across the substrate surface. This parameter adjustment allows the process to achieve both high productivity through batch processing and precise control over implantation depth distribution.
2Manufacturing precision
If the inclination angle of the support is increased to improve implantation depth uniformity, then the manufacturing precision is improved, but the device complexity increases due to additional adjustment mechanisms
Solution Approach 1:
The patent applies the universality principle by designing the support to serve multiple functions: it holds the substrate during implantation and simultaneously provides the inclination adjustment mechanism. The support structure integrates both substrate positioning and angle variation capabilities into a single component, avoiding the need for separate adjustment devices and thereby limiting the increase in device complexity while achieving improved manufacturing precision.
3Manufacturing precision
If multiple inclinations are applied during implantation to achieve uniform depth, then the manufacturing precision is improved, but the duration of action increases due to additional positioning steps
Solution Approach 1:
The patent applies the continuity principle by implementing continuous rotation of the support during the implantation process rather than discrete repositioning steps. The support rotates continuously about its axis, exposing different portions of the substrate to the species flux at varying inclinations throughout the implantation duration. This continuous action eliminates idle positioning time between angle changes, maintaining manufacturing precision while minimizing the overall process time.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method significantly improves the uniformity of the implantation depth and thickness variability of the thin semiconductor layer to less than 5 Å, enhancing the quality of the SOI structure by reducing thickness variability and surface roughness.
Implementation Method 1
implantation of atomic or ionic species into the substrate, through the layer of oxide, so as to form a fragilization region within the substrate
Implementation Method 2
This allows the implantation depth of the species to be made uniform, by notably reducing a phenomenon known as 'channeling,' during which the implanted species along a main direction of the crystal lattice formed by the thin layer propagate to a greater depth than the mean depth reached by the implanted species
Data Source
AI summary
The disclosure relates to a method for implantation of atomic or ionic species into a batch of substrates made of semiconductor material, in which: each substrate made of semiconductor material is positioned on a respective support of a batch implanter, each substrate comprising a thin layer of electrical insulator on its surface; and a dose of at least one ionic or atomic species is implanted over the whole surface of the substrates, through their layer of insulator, so as to form a fragilization region within each substrate and to bound there a thin layer of semiconductor material between the thin layer of insulator and the fragilization region of the substrate, the implantation method being characterized in that, during the method, each support on which a substrate is positioned has at least two separate inclinations with respect to the plane orthogonal to the direction of implantation of the species in order to improve the implantation depth of the species in the substrate. The disclosure also relates to structures of the semiconductor-on-insulator type obtained by the implementation of the implantation method.