Selective Metal Deposition in Batch Reactors for IC Surface Selectivity
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Solution Overview
Problem
The complexity and inefficiency of integrated circuit manufacturing processes are exacerbated by the need for multiple steps in material deposition, particularly in batch reactors, where single wafer reactor processes are not easily translatable due to varying process conditions.
Innovation Solution
A selective deposition method involving a precursor compound MXnOm and a reactant, such as molybdenum oxychloride and ammonia, is used to form a metal layer selectively on a first surface relative to a second surface, with controlled pulse durations and temperatures, enabling simultaneous deposition on multiple substrates in a batch reactor.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If material is deposited over the entire substrate surface, then complete coverage is achieved, but the number of manufacturing steps increases due to subsequent mask and etching processes
Solution Approach 1:
The patent applies local quality by making the deposition process itself selective rather than uniform. By controlling gas flow and reaction conditions, material is deposited only on specific regions (first surface) while leaving other regions (second surface) untouched. This eliminates the need for separate mask and etching steps, directly reducing manufacturing process complexity while maintaining selective deposition precision.
2Productivity
If single wafer reactor processes are translated to batch reactors, then throughput is improved by processing multiple substrates simultaneously, but process reliability deteriorates due to different process conditions
Solution Approach 1:
The patent applies parameter changes by identifying and controlling key process parameters (gas flow rates, precursor delivery timing, temperature) to maintain consistency across batch processing. By adjusting these parameters appropriately for batch reactor conditions, the process achieves reliable selective deposition on multiple substrates simultaneously, bridging the gap between single wafer and batch processing reliability.
Solution Approach 2:
The patent employs periodic action through pulsed precursor delivery in the batch reactor. The precursor is introduced in controlled pulses rather than continuous flow, allowing uniform distribution and reaction across multiple substrates. This periodic introduction method maintains process consistency and reliability while enabling simultaneous processing of many substrates, thereby improving throughput.
3Manufacturing precision
If pulse duration is extended to improve selective deposition, then material selectivity increases, but deposition time increases
Solution Approach 1:
The patent applies continuity of useful action by implementing multiple sequential deposition cycles within the batch reactor. Rather than relying on a single long pulse, the process performs many shorter pulses in succession, continuously depositing material on the first surface while leaving the second surface unaffected. This maintains high material selectivity while the cumulative effect achieves the required deposition thickness in practical timeframes.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method reduces the number of manufacturing steps and improves throughput by allowing precise and efficient deposition of metal layers on specific surfaces, enhancing electrical connections and filling gaps in integrated circuits.
Implementation Method 1
contacting the plurality of substrates with a precursor comprising a compound of the form MXnOm
Implementation Method 2
contacting the plurality of substrates with a reactant
Data Source
AI summary
A selective deposition method is disclosed. The selective deposition method comprises providing a plurality of substrates in a process chamber, the plurality of substrates having a first surface comprising a first material and a second surface comprising a second material, the first surface being different than the second surface, and selectively forming a layer comprising a metal on the first surface relative to the second surface, wherein selectively forming the layer comprises: i) contacting the plurality of substrates with a precursor comprising a compound of the form MXnOm, wherein: M is a metal; X is selected from the group consisting of F, Cl, Br, and I; n and m are integers; n+2m is at least 4 to at most 6; and ii) contacting the plurality of substrates with a reactant, wherein step i) comprises pulsing the precursor for a pulse duration of greater than 10 seconds.