Batch Plasma Chamber Layout for Uniform Multi-Tier Processing
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Solution Overview
Problem
Current plasma processing apparatuses face challenges in achieving uniform plasma distribution and radical uniformity across multiple substrates, particularly in batch processing, leading to inconsistent film formation and etching results.
Innovation Solution
A plasma processing apparatus with a capacitively-coupled plasma generation system, utilizing a pair of electrodes outside the processing container, a gas supply system, and a rotating substrate holder, which applies radio-frequency power to generate a uniform electric field and plasma distribution across substrates, ensuring consistent processing across multiple tiers.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If a plasma generator is recessed outward concavely in the sidewall to generate laminar flows, then radical generation is improved, but plasma distribution uniformity across multiple substrates deteriorates
Solution Approach 1:
The plasma generation system is segmented into multiple independent plasma generators distributed around the processing container, with each generator serving a specific angular position. This segmentation allows independent control of plasma generation at different locations, enabling both sufficient radical generation quantity and uniform plasma distribution across multiple substrates arranged in different tiers.
Solution Approach 2:
Each plasma generator is designed with locally optimized characteristics including specific recessed depths, opening angles, and gas supply configurations tailored to its angular position. This local quality optimization ensures that each generator contributes appropriately to the overall plasma distribution, achieving uniformity across substrates while maintaining high radical generation at each local position.
2Productivity
If substrates are arranged in multiple tiers for batch processing, then productivity is improved, but plasma distribution uniformity deteriorates
Solution Approach 1:
The plasma generation approach transitions from a single-dimension (horizontal) plasma source to a three-dimensional plasma distribution system. Plasma generators are positioned at different angular positions and heights, creating plasma fields that penetrate and distribute uniformly across substrates in multiple vertical tiers, thus maintaining processing consistency while enabling batch processing.
Solution Approach 2:
The system incorporates rotational capability where the substrate holder or plasma generators can rotate during processing. This dynamic adjustment allows different angular positions of plasma generators to sequentially or simultaneously act on different substrate positions, ensuring uniform plasma exposure across all substrates in multiple tiers and maintaining processing consistency.
3Quantity of substance
If plasma generators are positioned to generate laminar flows, then radical diffusion is improved, but plasma density uniformity deteriorates
Solution Approach 1:
Plasma generators are designed with asymmetric configurations including non-uniform recessed depths, varied opening angles, and differential gas flow rates depending on their angular positions. This asymmetry compensates for the natural decay of plasma density with distance, ensuring that regions requiring more radical diffusion receive stronger plasma generation while maintaining overall plasma density uniformity across the processing chamber.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The apparatus achieves improved uniformity of plasma density and radical distribution across substrates, enhancing the consistency and efficiency of film formation and etching processes, particularly by controlling pressure and radio-frequency power application.
Implementation Method 1
a radio-frequency power supply that applies radio-frequency power to the pair of electrodes, thereby generating a capacitively-coupled plasma inside the processing container
Implementation Method 2
applying radio-frequency power to the pair of electrodes, thereby generating a capacitively-coupled plasma
Data Source
AI summary
The plasma processing apparatus includes a processing container, a substrate holder that is inserted into the processing container and places a plurality of substrates in multiple tiers, a rotation shaft that rotates the substrate holder inside the processing container, a gas supply pipe that supplies a processing gas into the processing container, an exhauster that evacuates an inside of the processing container, a pair of electrodes arranged outside the processing container to face each other across a center of the processing container, and a radio-frequency power supply that applies radio-frequency power to the pair of electrodes, thereby generating capacitively-coupled plasma inside the processing container.