Batch Plasma Chamber Shielding for Uniform Multi-Wafer Etching
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Solution Overview
Problem
Batch type plasma processing apparatuses face challenges in achieving uniform plasma processing across multiple wafers due to interference between radio-frequency power sources and improper contact between shield components, leading to non-uniform etching rates and plasma leakage.
Innovation Solution
The plasma processing apparatus incorporates insulated deposit shields connected by a stay with improved contact mechanisms, including sealing members, to prevent radio-frequency interference and ensure uniform plasma generation across processing spaces, using multiple RF power sources and matching circuits to adjust power supply timings for each wafer support.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If multiple substrate supports are provided in a batch type processing apparatus to process multiple wafers simultaneously, then productivity is improved, but radio-frequency interference occurs between adjacent substrate supports leading to non-uniform plasma processing
Solution Approach 1:
The processing chamber is divided into multiple independent processing spaces by partition walls, with each substrate support and its RF power source confined to separate spaces. This segmentation prevents radio-frequency interference between adjacent substrate supports while maintaining batch processing capability, thus resolving the contradiction between productivity improvement and plasma processing uniformity.
2Object-affected harmful factors
If shield members are provided along the wall surface to separate processing spaces, then plasma leakage is reduced, but improper contact between shield components causes radio-frequency interference
Solution Approach 1:
Conductive seals are introduced as intermediary components between the partition wall and shield members to ensure proper electrical contact. These seals act as mediators that maintain radio-frequency continuity across the shield structure without compromising plasma containment, thereby eliminating radio-frequency interference while preserving plasma leakage prevention.
Solution Approach 2:
The shield members are designed with differentiated contact requirements: conductive seals are applied specifically at interfaces requiring electrical continuity, while other portions maintain plasma barrier properties. This localized application of different contact qualities resolves the contradiction between preventing plasma leakage and avoiding radio-frequency interference.
3Reliability
If conductive seals are provided between the partition wall and shield member to ensure contact, then radio-frequency interference is suppressed, but manufacturing complexity increases
Solution Approach 1:
The conductive seal is nested within the groove structure formed by the partition wall and shield member, creating a self-contained contact interface. This nested configuration ensures reliable radio-frequency contact while simplifying assembly, as the seal is automatically positioned within the groove during installation, reducing manufacturing complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration achieves uniform etching rates and plasma distribution across multiple wafers, reducing plasma leakage and ensuring consistent processing results by suppressing radio-frequency interference and enhancing contact reliability between shield components.
Implementation Method 1
a first radio-frequency power source configured to supply a first radio-frequency power to the first lower electrode; a second radio-frequency power source configured to supply a second radio-frequency power to the second lower electrode
Implementation Method 2
configured to generate a plasma by using the supplied radio-frequency power
Data Source
AI summary
A plasma processing apparatus includes: a chamber accommodating a plurality of substrates; a plurality of substrate supports provided inside the chamber and configured to support a substrate; a plurality of radio-frequency power sources provided corresponding to the plurality of substrate supports, and configured to supply radio-frequency power to the plurality of substrate supports, respectively; and a plurality of shields configured to compart the inside of the chamber and provided corresponding to the plurality of substrate supports to define a processing space where plasma is generated. A radio-frequency current path is formed between the plurality of shields so as not to interfere with one another.