Batch Substrate Loading Layout for Uniform Film Thickness

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Solution Overview

Problem

In semiconductor device manufacturing, batch processing of substrates with less than the maximum loadable number on a substrate holder results in non-uniform film thickness due to varying exposure amounts of process gases, leading to deteriorated film characteristics and surface area inconsistencies.

Innovation Solution

The substrates are dispersedly loaded across the substrate holder, with varying density distributions and the use of dummy substrates to adjust gas exposure, ensuring uniform film formation by controlling the gas supply through strategically placed nozzles and gas supply holes, and a controller to manage the loading pattern and gas flow.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Productivity

If substrates are loaded densely on the substrate holder to maximize productivity, then the loading capacity is improved, but the film thickness uniformity deteriorates due to non-uniform gas exposure

Engineering Contradiction:
Improveloading capacityVSAvoidfilm thickness uniformity
Core Design Contradiction:
ProductivityVSManufacturing precision

Solution Approach 1:

The patent applies local quality by creating different loading densities in different regions of the substrate holder. The controller disperses substrates to form a first region with higher loading density and a second region with lower loading density. This regional differentiation compensates for non-uniform gas exposure, ensuring that substrates in high-density regions receive sufficient gas flow while maintaining overall high loading capacity.

Inventive Principle:
Principle #3Local quality

Solution Approach 2:

The patent changes the spatial distribution parameter of substrate loading from uniform to non-uniform. By controlling the transporter to place substrates in specific patterns with varying densities across different regions, the system optimizes gas flow distribution and achieves uniform film thickness while maintaining high productivity.

Inventive Principle:
Principle #35Parameter changes

2Manufacturing precision

If substrates are dispersedly loaded to improve film thickness uniformity, then the manufacturing precision is improved, but the loading capacity decreases

Engineering Contradiction:
Improvefilm thickness uniformityVSAvoidloading capacity
Core Design Contradiction:
Manufacturing precisionVSProductivity

Solution Approach 1:

Rather than uniformly dispersing substrates across the entire holder, the patent creates localized high-density regions surrounded by lower-density areas. This approach maintains high overall loading capacity while ensuring that no single region becomes so dense as to block gas flow, thus preserving film thickness uniformity.

Inventive Principle:
Principle #3Local quality

3Manufacturing precision

If the gas supply is increased to compensate for blocked flow in densely loaded regions, then the film formation is improved, but the gas consumption and system complexity increase

Engineering Contradiction:
Improvefilm formation qualityVSAvoidgas supply control complexity
Core Design Contradiction:
Manufacturing precisionVSDevice complexity

Solution Approach 1:

The patent performs preliminary action by pre-arranging substrates in optimized loading patterns before the film formation process begins. The controller calculates and executes the dispersed loading pattern in advance, eliminating the need for complex real-time gas flow adjustments during processing. This simplifies the gas supply system while ensuring uniform film formation.

Inventive Principle:
Principle #10Preliminary action

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach enhances film thickness uniformity and controllability across substrates, improving processing uniformity and reducing variations in film characteristics, even when processing multiple substrates simultaneously.

Implementation Method 1

processing of forming a film on a substrate accommodated in a process chamber may be performed

Methodology Applied
Scientific EffectChemical Vapour Deposition: Chemical Vapour Deposition

Data Source

PatentUS20240170310A1Substrate processing apparatus, method of manufacturing semiconductor device, and recording medium
Publication Date: 2024.05.23 KOKUSAI DENKI KK
  • US20240170310A1 patent drawing
  • US20240170310A1 patent drawing
  • US20240170310A1 patent drawing

AI summary

To enable improvement in uniformity of film thickness between a plurality of substrates as compared with that of the related art in a case where the plurality of substrates is loaded in a boat and subjected to batch processing, a substrate processing apparatus is configured to include a process container capable of accommodating a substrate holder that holds substrates, a gas supplier that supplies a gas to the process container, an exhauster that exhausts an atmosphere in the process container, a transporter that transports the substrates, and a controller configured to be capable of controlling the transporter to dispersedly load the substrates from a central portion of a first region in a case where a number X of the substrates is smaller than a maximum loading number Y of the substrate holder, and the substrate holder includes, at the central portion, the first region where the dispersion loading is performed.