Batch Substrate Processing Apparatus with Recessed Electrodes
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Solution Overview
Problem
Batch type substrate processing apparatuses face issues with undesired thin film formation on inner walls due to process gases, leading to contamination and reduced efficiency, especially when plasma is generated, as these films are separated as particles by magnetic or electric fields, affecting the quality and efficiency of the substrate processing.
Innovation Solution
A batch type plasma substrate processing apparatus with a separate discharge space for plasma generation, where process gas is decomposed and radicals are supplied to the processing space, using a tube with recesses for electrode accommodation and pulsed RF power to control plasma generation, preventing particle formation on the inner walls.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If process gas is directly injected into the processing space, then substrate processing can be performed, but undesired thin films are formed on the inner wall surface of the processing space
Solution Approach 1:
The processing space is divided into two separate spaces: a discharge space for plasma generation and a processing space for substrate treatment. The partition wall separates these spaces, allowing process gas to be decomposed in the discharge space before radicals are supplied to the processing space. This segmentation prevents direct contact between process gas and the inner wall surface, eliminating thin film formation while maintaining processing efficiency.
Solution Approach 2:
The partition wall acts as an intermediary structure between the discharge space and processing space. It allows selective transfer of plasma radicals to the processing space while blocking the transfer of process gas molecules that would otherwise deposit on the inner wall surface. This mediator approach enables beneficial plasma effects while preventing harmful thin film deposition.
2Manufacturing precision
If plasma is generated in the processing space, then process gas can be decomposed, but thin films deposited on the inner wall are separated as particles by magnetic or electric fields to serve as contaminants
Solution Approach 1:
By separating plasma generation from substrate processing into distinct spaces, the patent prevents the generation of magnetic and electric fields in the processing space. These fields are confined to the discharge space where they serve only to decompose process gas. This eliminates the harmful effect of field-induced particle detachment from wall deposits while maintaining effective plasma decomposition in the separated discharge space.
Solution Approach 2:
The harmful magnetic and electric fields are extracted from the processing space and confined to the discharge space. Only the beneficial decomposed radicals are transferred to the processing space through the partition wall, while the fields that cause particle contamination remain isolated in the discharge space where they cannot affect the substrates.
3Productivity
If electrodes are disposed inside the tube in the processing space, then plasma can be generated directly, but the complexity of the apparatus increases and particle contamination occurs
Solution Approach 1:
The patent segments the apparatus into a discharge space with electrodes for plasma generation and a processing space for substrate treatment. This segmentation allows plasma to be generated efficiently in the discharge space while keeping the processing space free of electrodes and associated complexity. The partition wall enables this functional separation, simplifying the overall structure compared to having electrodes directly in the processing space.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This solution maintains the quality of thin films on substrates by preventing particle contamination from the inner walls, enhancing processing efficiency by ensuring uniform plasma generation and radical supply while minimizing damage to the apparatus components.
Implementation Method 1
a batch type plasma substrate processing apparatus which provides a process gas decomposed in a separate space into a processing space
Implementation Method 2
a plurality of power electrodes to which RF power is applied and a ground electrode that is grounded, and the recess which is disposed at an intermediate portion and in which the ground electrode is accommodated may have a depth greater than that of each of the rest recesses among the plurality of recesses
Implementation Method 3
a partition wall extending in a longitudinal direction of the tube and disposed inside the tube to provide a discharge space which is separated from the processing space
Implementation Method 4
a gas supply pipe configured to supply a process gas required for processing the plurality of substrates to the discharge space
Implementation Method 5
The tube may have a plurality of recesses extending in the longitudinal direction of the tube and recessed inward from the outermost circumferential surface of the tube, and the plurality of electrodes may be accommodated in the plurality of recesses, respectively
Data Source
AI summary
Provided is a substrate processing apparatus. The substrate processing apparatus includes a tube configured to provide a processing space, a partition wall configured to provide a discharge space in which plasma is generated, a gas supply pipe configured to supply a process gas to the discharge space, and a plurality of electrodes disposed outside the tube to generate the plasma in the discharge space. The tube has a plurality of recesses recessed inward from the outermost circumferential surface of the tube, and the plurality of electrodes are accommodated in the plurality of recesses, respectively.