Substrate processing apparatus
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Solution Overview
Problem
Existing batch-type substrate processing apparatuses face challenges in achieving uniform gas flow and temperature distribution during film formation and etching processes, leading to non-uniform processing results across multiple substrates.
Innovation Solution
The apparatus incorporates a reaction tube with integrated gas introduction and exhaust systems, including a vacuum pipe and exhaust duct, designed to ensure uniform gas flow and temperature control through optimized pipe configurations and heating elements, enhancing in-plane and inter-plane uniformity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If gas is supplied into the reaction tube and exhausted through conventional pipe configurations, then the substrate processing can be performed, but non-uniform gas flow and temperature distribution occur leading to poor processing uniformity
Solution Approach 1:
The exhaust system is segmented into multiple exhaust ports distributed around the reaction tube perimeter, with each port connected to the vacuum pipe through separate exhaust ducts. This segmentation allows gas to be exhausted from multiple locations simultaneously, creating a more uniform gas flow distribution pattern throughout the reaction tube and improving processing uniformity across the substrate surface.
Solution Approach 2:
The exhaust ducts are positioned at different locations around the reaction tube with their open ends facing different directions, creating localized exhaust zones. This local quality approach ensures that gas flow characteristics are optimized at different positions within the reaction tube, preventing stagnant zones and dead zones that would cause non-uniform processing. Each local region has tailored exhaust characteristics matched to its specific requirements.
2Temperature
If conventional vacuum pipe and exhaust duct configurations are used, then the apparatus structure is simple, but temperature distribution becomes non-uniform affecting film formation quality
Solution Approach 1:
The exhaust ports and ducts are arranged in a three-dimensional configuration around the reaction tube, extending in multiple spatial directions rather than a single plane. This dimensional approach allows heat and gas to be distributed more evenly throughout the reaction volume, eliminating temperature gradients that would otherwise occur with conventional single-plane exhaust configurations. The multi-dimensional arrangement ensures uniform thermal and flow fields.
3Manufacturing precision
If gas exhaust is performed from a single location, then the vacuum pipe configuration is simple, but gas flow uniformity and processing consistency deteriorate
Solution Approach 1:
Multiple exhaust ducts from different locations around the reaction tube are merged into a single common vacuum pipe that connects to the vacuum source. This merging approach maintains the benefits of distributed exhaust ports for uniform gas flow while consolidating the vacuum connection points, thereby improving processing uniformity without proportionally increasing the complexity of the vacuum system architecture.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This design achieves improved uniformity in film formation and etching processes by ensuring consistent gas flow and temperature distribution across substrates, thereby enhancing processing quality.
Implementation Method 1
an exhaust duct (40) having a flow path configured to bring an interior of the reaction tube (10) into communication with an interior of the vacuum pipe (30)
Data Source
AI summary
A substrate processing apparatus includes a reaction tube having a first pipe axis extending in a vertical direction, a vacuum pipe provided to be spaced horizontally apart from the reaction tube and having a second pipe axis parallel to the first pipe axis, an exhaust duct having a flow path configured to bring an interior of the reaction tube into communication with an interior of the vacuum pipe, and a housing configured to accommodate the reaction tube, the vacuum pipe, and the exhaust duct therein.